BUK7210-55B,118
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Nexperia USA Inc. BUK7210-55B,118

Manufacturer No:
BUK7210-55B,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 75A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7210-55B,118 is a high-performance N-channel TrenchMOS standard level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed for automotive and industrial applications, offering superior switching performance and low on-state resistance. The transistor is packaged in a TO-252-3, DPAK (2 leads + tab), SC-63 package, making it suitable for surface mount applications.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)55V
Continuous Drain Current (Id) @ 25°C75A
On-State Resistance (Rds On) @ Id, Vgs10 mΩ @ 25A, 10V
Threshold Voltage (Vgs(th)) @ Id4 V @ 1mAV
Input Capacitance (Ciss) @ Vds2453 pF @ 25VpF
Gate Charge (Qg) @ Vgs35 nC @ 10VnC
Maximum Gate Voltage (Vgs)±20V
Operating Temperature (Tj)-55°C ~ 185°C°C
Power Dissipation (Max) @ Tc167 WW
Moisture Sensitivity Level (MSL)1 (Unlimited)
RoHS StatusNon-RoHS Compliant

Key Features

  • High-performance N-channel TrenchMOS technology for low on-state resistance and fast switching times.
  • High continuous drain current of up to 75A at 25°C.
  • Low on-state resistance of 10 mΩ at 25A and 10V Vgs.
  • Wide operating temperature range from -55°C to 185°C.
  • Surface mount package (TO-252-3, DPAK) for easy integration into various applications.
  • High power dissipation capability of up to 167W at Tc.

Applications

The BUK7210-55B,118 is suitable for a variety of applications, including:

  • Automotive systems: Such as power steering, anti-lock braking systems (ABS), and electric power steering (EPS).
  • Industrial power supplies: For high-power switching and power management.
  • Motor control: For DC and AC motor drives.
  • Power tools and equipment: For high-current and high-power applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK7210-55B,118?
    The maximum drain to source voltage (Vdss) is 55V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is up to 75A.
  3. What is the on-state resistance (Rds On) at 25A and 10V Vgs?
    The on-state resistance (Rds On) is 10 mΩ at 25A and 10V Vgs.
  4. What is the operating temperature range of the BUK7210-55B,118?
    The operating temperature range is from -55°C to 185°C.
  5. What type of package does the BUK7210-55B,118 use?
    The device is packaged in a TO-252-3, DPAK (2 leads + tab), SC-63 package.
  6. What is the maximum power dissipation capability of the BUK7210-55B,118?
    The maximum power dissipation capability is up to 167W at Tc.
  7. Is the BUK7210-55B,118 RoHS compliant?
    No, the BUK7210-55B,118 is non-RoHS compliant.
  8. What is the moisture sensitivity level (MSL) of the BUK7210-55B,118?
    The moisture sensitivity level (MSL) is 1 (Unlimited).
  9. What are some typical applications for the BUK7210-55B,118?
    Typical applications include automotive systems, industrial power supplies, motor control, and power tools and equipment.
  10. What technology does the BUK7210-55B,118 use?
    The device uses high-performance N-channel TrenchMOS technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2453 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 185°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number BUK7210-55B,118 BUK7212-55B,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V 12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2453 pF @ 25 V 2453 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 167W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ) -55°C ~ 185°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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