BST82,215
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Nexperia USA Inc. BST82,215

Manufacturer No:
BST82,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 190MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BST82,215 is an N-Channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high efficiency and low spiking characteristics. The BST82,215 is encapsulated in the SOT23 package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Channel ModeEnhancement
Voltage Rating (Vds)100 V
Current Rating (Id)190 mA (Ta)
Power Dissipation (Pd)830 mW (Tc)
Maximum Operating Temperature+150°C
PackagingTO-236AB (SOT23)
Package TypeSurface Mount

Key Features

  • Low Q for higher efficiency and lower spiking
  • Standard-level gate drive
  • Enhancement mode N-Channel MOSFET
  • Compact SOT23 package for space-saving designs
  • High maximum operating temperature of +150°C

Applications

The BST82,215 MOSFET is suitable for a wide range of applications, including but not limited to:

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial electronics
  • Consumer electronics requiring high efficiency and reliability

Q & A

  1. What is the voltage rating of the BST82,215 MOSFET? The voltage rating (Vds) of the BST82,215 is 100 V.
  2. What is the current rating of the BST82,215 MOSFET? The current rating (Id) of the BST82,215 is 190 mA at ambient temperature (Ta).
  3. What is the power dissipation of the BST82,215 MOSFET? The power dissipation (Pd) of the BST82,215 is 830 mW at the case temperature (Tc).
  4. What is the maximum operating temperature of the BST82,215 MOSFET? The maximum operating temperature of the BST82,215 is +150°C.
  5. What package type does the BST82,215 MOSFET use? The BST82,215 MOSFET is packaged in a TO-236AB (SOT23) surface mount package.
  6. What are the key features of the BST82,215 MOSFET? The BST82,215 features low Q for higher efficiency, standard-level gate drive, and an enhancement mode N-Channel configuration.
  7. Where can the BST82,215 MOSFET be used? The BST82,215 can be used in power management, DC-DC converters, motor control, automotive electronics, and consumer electronics.
  8. Why is the SOT23 package beneficial? The SOT23 package is beneficial due to its compact size, making it ideal for space-saving designs.
  9. Is the BST82,215 compliant with environmental standards? Yes, Nexperia provides chemical content data to ensure compliance with national and international legal standards such as EU/CN RoHS and REACH.
  10. Where can I purchase the BST82,215 MOSFET? The BST82,215 MOSFET can be purchased from various electronic component distributors such as Mouser, Digi-Key, and TTI Inc..

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BST82,235
BST82,235
MOSFET N-CH 100V 190MA TO236AB

Similar Products

Part Number BST82,215 BST82,235
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 150mA, 5V 10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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