BST82,235
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Nexperia USA Inc. BST82,235

Manufacturer No:
BST82,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 190MA TO236AB
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BST82,235 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is encapsulated in the compact SOT23 package, making it ideal for a wide range of electronic applications where space is limited. The BST82,235 is known for its low power consumption, high integration level, and reliable performance over a wide range of temperatures. It is part of Nexperia's extensive portfolio of MOSFETs, which are recognized for their efficiency and durability.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Continuous Drain Current) 0.19 A
Idm (Pulse Drain Current) 0.8 A
Ptot (Total Power Dissipation) 0.83 W
Package SOT23 -
Gate Threshold Voltage (VGS(th)) 1.5 - 3.5 V

Key Features

  • Compact SOT23 Package: Ideal for space-constrained applications.
  • Low Power Consumption: Enhances device longevity and efficiency.
  • High Integration Level: Suitable for complex electronic circuits.
  • Reliable Performance: Consistent output over a wide range of temperatures.
  • Energy-Efficient Operation: Low Q for higher efficiency and lower spiking.
  • Compliance with International Standards: Meets EU/CN RoHS, REACH, and other international standards for electronic components.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its robust performance and compliance with automotive standards.
  • Consumer Electronics: Used in a variety of consumer electronic devices where compact size and low power consumption are critical.
  • Industrial Control Systems: Ideal for industrial control systems that require reliable and efficient performance.
  • Power Management Systems: Utilized in power management circuits for its high efficiency and low power consumption.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BST82,235 MOSFET?

    The maximum drain-source voltage (VDS) of the BST82,235 MOSFET is 100 V.

  2. What is the continuous drain current (ID) of the BST82,235?

    The continuous drain current (ID) of the BST82,235 is 0.19 A.

  3. What package type is the BST82,235 MOSFET available in?

    The BST82,235 MOSFET is available in the SOT23 package.

  4. Is the BST82,235 compliant with international environmental standards?

    Yes, the BST82,235 is compliant with EU/CN RoHS, REACH, and other international standards for electronic components.

  5. What are the typical applications of the BST82,235 MOSFET?

    The BST82,235 MOSFET is typically used in automotive systems, consumer electronics, industrial control systems, and power management systems.

  6. What is the total power dissipation (Ptot) of the BST82,235?

    The total power dissipation (Ptot) of the BST82,235 is 0.83 W.

  7. Does the BST82,235 have a low power consumption?

    Yes, the BST82,235 is designed with low power consumption to enhance device longevity and efficiency.

  8. What is the gate threshold voltage (VGS(th)) range of the BST82,235?

    The gate threshold voltage (VGS(th)) range of the BST82,235 is 1.5 - 3.5 V.

  9. Is the BST82,235 suitable for high-temperature applications?

    Yes, the BST82,235 provides reliable performance over a wide range of temperatures.

  10. How is the BST82,235 supplied for automated assembly?

    The BST82,235 is supplied in tape and reel for automated assembly.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BST82,235
BST82,235
MOSFET N-CH 100V 190MA TO236AB

Similar Products

Part Number BST82,235 BST82,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 150mA, 5V 10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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