BSS138P,215
  • Share:

Nexperia USA Inc. BSS138P,215

Manufacturer No:
BSS138P,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 360MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138P,215 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is known for its fast switching capabilities and logic-level compatibility, making it suitable for a wide range of applications.

Key Specifications

Parameter Value
Type N-channel enhancement mode Field-Effect Transistor (FET)
Drain-Source Voltage (Vds) 60 V
Continuous Drain Current (Id) 360 mA
On Resistance (Rds(on)) 0.9 ohm (at Vgs = 10 V)
Threshold Voltage (Vgs(th)) 1.1 V
Package SOT23 (TO-236AB)
Maximum Power Dissipation (Ptot) 350 mW
Maximum Junction Temperature (Tj) 150°C
ESD Protection Up to 1.5 kV
Qualification AEC-Q101 qualified

Key Features

  • Very fast switching
  • Logic-level compatible
  • Trench MOSFET technology for improved performance
  • ESD protection up to 1.5 kV
  • AEC-Q101 qualified, ensuring reliability in automotive applications
  • Low on-resistance (Rds(on)) of 0.9 ohm at Vgs = 10 V

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Audio and signal processing
  • Power management
  • Communications and networking
  • Industrial applications

Q & A

  1. What is the maximum drain-source voltage (Vds) of the BSS138P,215?

    The maximum drain-source voltage (Vds) is 60 V.

  2. What is the continuous drain current (Id) of the BSS138P,215?

    The continuous drain current (Id) is 360 mA.

  3. What is the on-resistance (Rds(on)) of the BSS138P,215?

    The on-resistance (Rds(on)) is 0.9 ohm at Vgs = 10 V.

  4. What is the threshold voltage (Vgs(th)) of the BSS138P,215?

    The threshold voltage (Vgs(th)) is 1.1 V.

  5. What package type is used for the BSS138P,215?

    The BSS138P,215 is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  6. Is the BSS138P,215 AEC-Q101 qualified?

    Yes, the BSS138P,215 is AEC-Q101 qualified.

  7. What is the maximum power dissipation (Ptot) of the BSS138P,215?

    The maximum power dissipation (Ptot) is 350 mW.

  8. What is the maximum junction temperature (Tj) of the BSS138P,215?

    The maximum junction temperature (Tj) is 150°C.

  9. Does the BSS138P,215 have ESD protection?

    Yes, the BSS138P,215 has ESD protection up to 1.5 kV.

  10. What are some common applications of the BSS138P,215?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, switching circuits, audio and signal processing, power management, communications and networking, and industrial applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 1.14W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.26
1,856

Please send RFQ , we will respond immediately.

Related Product By Categories

STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BZV55-B12,135
BZV55-B12,135
Nexperia USA Inc.
DIODE ZENER 12V 500MW LLDS
PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PDZ10B-QX
PDZ10B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP