BSS138P,215
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Nexperia USA Inc. BSS138P,215

Manufacturer No:
BSS138P,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 360MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138P,215 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is known for its fast switching capabilities and logic-level compatibility, making it suitable for a wide range of applications.

Key Specifications

Parameter Value
Type N-channel enhancement mode Field-Effect Transistor (FET)
Drain-Source Voltage (Vds) 60 V
Continuous Drain Current (Id) 360 mA
On Resistance (Rds(on)) 0.9 ohm (at Vgs = 10 V)
Threshold Voltage (Vgs(th)) 1.1 V
Package SOT23 (TO-236AB)
Maximum Power Dissipation (Ptot) 350 mW
Maximum Junction Temperature (Tj) 150°C
ESD Protection Up to 1.5 kV
Qualification AEC-Q101 qualified

Key Features

  • Very fast switching
  • Logic-level compatible
  • Trench MOSFET technology for improved performance
  • ESD protection up to 1.5 kV
  • AEC-Q101 qualified, ensuring reliability in automotive applications
  • Low on-resistance (Rds(on)) of 0.9 ohm at Vgs = 10 V

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Audio and signal processing
  • Power management
  • Communications and networking
  • Industrial applications

Q & A

  1. What is the maximum drain-source voltage (Vds) of the BSS138P,215?

    The maximum drain-source voltage (Vds) is 60 V.

  2. What is the continuous drain current (Id) of the BSS138P,215?

    The continuous drain current (Id) is 360 mA.

  3. What is the on-resistance (Rds(on)) of the BSS138P,215?

    The on-resistance (Rds(on)) is 0.9 ohm at Vgs = 10 V.

  4. What is the threshold voltage (Vgs(th)) of the BSS138P,215?

    The threshold voltage (Vgs(th)) is 1.1 V.

  5. What package type is used for the BSS138P,215?

    The BSS138P,215 is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  6. Is the BSS138P,215 AEC-Q101 qualified?

    Yes, the BSS138P,215 is AEC-Q101 qualified.

  7. What is the maximum power dissipation (Ptot) of the BSS138P,215?

    The maximum power dissipation (Ptot) is 350 mW.

  8. What is the maximum junction temperature (Tj) of the BSS138P,215?

    The maximum junction temperature (Tj) is 150°C.

  9. Does the BSS138P,215 have ESD protection?

    Yes, the BSS138P,215 has ESD protection up to 1.5 kV.

  10. What are some common applications of the BSS138P,215?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, switching circuits, audio and signal processing, power management, communications and networking, and industrial applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 1.14W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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