English
2N7002NXAKR
  • Share:

Nexperia USA Inc. 2N7002NXAKR

Manufacturer No:
2N7002NXAKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 190MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002NXAKR is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a small SOT23-3 (SC-70, SOT-323) package, making it ideal for space-constrained applications. It is designed for general-purpose switching and is particularly suited for use in DC-DC converters, power management, and other high-efficiency switching applications.

Key Specifications

ParameterValue
Type number2N7002
PackageSOT23-3 (SC-70, SOT-323)
Channel typeN-Channel
VDS [max]60 V
ID [max]300 mA
RDSon [max] @ VGS = 10 V1.6 Ω
VGS [max]-20 V, +20 V
VGSth [typ]1.6 V
Tj [max]150 °C
Ptot [max]350 mW
Ciss [typ]33 pF
Coss [typ]7 pF
QualificationAEC-Q101

Key Features

  • N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology.
  • Small SOT23-3 (SC-70, SOT-323) package for compact designs.
  • Maximum drain-source voltage (VDS) of 60 V and continuous drain current (ID) of 300 mA.
  • Low on-resistance (RDSon) of 1.6 Ω at VGS = 10 V.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • High power dissipation capability with a maximum junction temperature of 150 °C.

Applications

  • DC-DC converters and power management systems.
  • General-purpose switching applications.
  • Automotive systems due to AEC-Q101 qualification.
  • Efficient switching in high-frequency applications.
  • Small signal and low-power switching circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002NXAKR? The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current (ID) of the 2N7002NXAKR? The continuous drain current is 300 mA.
  3. What is the typical threshold voltage (VGSth) of the 2N7002NXAKR? The typical threshold voltage is 1.6 V.
  4. What package type is used for the 2N7002NXAKR? The 2N7002NXAKR is packaged in a SOT23-3 (SC-70, SOT-323) package.
  5. Is the 2N7002NXAKR qualified for automotive use? Yes, it is AEC-Q101 qualified.
  6. What is the maximum junction temperature (Tj) of the 2N7002NXAKR? The maximum junction temperature is 150 °C.
  7. What is the typical input capacitance (Ciss) of the 2N7002NXAKR? The typical input capacitance is 33 pF.
  8. What is the typical output capacitance (Coss) of the 2N7002NXAKR? The typical output capacitance is 7 pF.
  9. What is the maximum power dissipation (Ptot) of the 2N7002NXAKR? The maximum power dissipation is 350 mW.
  10. Is the 2N7002NXAKR suitable for high-frequency applications? Yes, it is designed for efficient switching in high-frequency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.43 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):265mW (Ta), 1.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.21
3,998

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number 2N7002NXAKR 2N7002NXBKR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta), 300mA (Tc) 270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.43 nC @ 4.5 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 10 V 23.6 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 265mW (Ta), 1.33W (Tc) 310mW (Ta), 1.67W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BZX84-C12/DG/B3,23
BZX84-C12/DG/B3,23
Nexperia USA Inc.
DIODE ZENER 12.05V 250MW TO236AB
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
NX138BKVL
NX138BKVL
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP