Overview
The 2N7002NXAKR is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a small SOT23-3 (SC-70, SOT-323) package, making it ideal for space-constrained applications. It is designed for general-purpose switching and is particularly suited for use in DC-DC converters, power management, and other high-efficiency switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | 2N7002 |
| Package | SOT23-3 (SC-70, SOT-323) |
| Channel type | N-Channel |
| VDS [max] | 60 V |
| ID [max] | 300 mA |
| RDSon [max] @ VGS = 10 V | 1.6 Ω |
| VGS [max] | -20 V, +20 V |
| VGSth [typ] | 1.6 V |
| Tj [max] | 150 °C |
| Ptot [max] | 350 mW |
| Ciss [typ] | 33 pF |
| Coss [typ] | 7 pF |
| Qualification | AEC-Q101 |
Key Features
- N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology.
- Small SOT23-3 (SC-70, SOT-323) package for compact designs.
- Maximum drain-source voltage (VDS) of 60 V and continuous drain current (ID) of 300 mA.
- Low on-resistance (RDSon) of 1.6 Ω at VGS = 10 V.
- AEC-Q101 qualified, making it suitable for automotive applications.
- High power dissipation capability with a maximum junction temperature of 150 °C.
Applications
- DC-DC converters and power management systems.
- General-purpose switching applications.
- Automotive systems due to AEC-Q101 qualification.
- Efficient switching in high-frequency applications.
- Small signal and low-power switching circuits.
Q & A
- What is the maximum drain-source voltage (VDS) of the 2N7002NXAKR? The maximum drain-source voltage is 60 V.
- What is the continuous drain current (ID) of the 2N7002NXAKR? The continuous drain current is 300 mA.
- What is the typical threshold voltage (VGSth) of the 2N7002NXAKR? The typical threshold voltage is 1.6 V.
- What package type is used for the 2N7002NXAKR? The 2N7002NXAKR is packaged in a SOT23-3 (SC-70, SOT-323) package.
- Is the 2N7002NXAKR qualified for automotive use? Yes, it is AEC-Q101 qualified.
- What is the maximum junction temperature (Tj) of the 2N7002NXAKR? The maximum junction temperature is 150 °C.
- What is the typical input capacitance (Ciss) of the 2N7002NXAKR? The typical input capacitance is 33 pF.
- What is the typical output capacitance (Coss) of the 2N7002NXAKR? The typical output capacitance is 7 pF.
- What is the maximum power dissipation (Ptot) of the 2N7002NXAKR? The maximum power dissipation is 350 mW.
- Is the 2N7002NXAKR suitable for high-frequency applications? Yes, it is designed for efficient switching in high-frequency applications.
