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2N7002NXAKR
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Nexperia USA Inc. 2N7002NXAKR

Manufacturer No:
2N7002NXAKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 190MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002NXAKR is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a small SOT23-3 (SC-70, SOT-323) package, making it ideal for space-constrained applications. It is designed for general-purpose switching and is particularly suited for use in DC-DC converters, power management, and other high-efficiency switching applications.

Key Specifications

ParameterValue
Type number2N7002
PackageSOT23-3 (SC-70, SOT-323)
Channel typeN-Channel
VDS [max]60 V
ID [max]300 mA
RDSon [max] @ VGS = 10 V1.6 Ω
VGS [max]-20 V, +20 V
VGSth [typ]1.6 V
Tj [max]150 °C
Ptot [max]350 mW
Ciss [typ]33 pF
Coss [typ]7 pF
QualificationAEC-Q101

Key Features

  • N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology.
  • Small SOT23-3 (SC-70, SOT-323) package for compact designs.
  • Maximum drain-source voltage (VDS) of 60 V and continuous drain current (ID) of 300 mA.
  • Low on-resistance (RDSon) of 1.6 Ω at VGS = 10 V.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • High power dissipation capability with a maximum junction temperature of 150 °C.

Applications

  • DC-DC converters and power management systems.
  • General-purpose switching applications.
  • Automotive systems due to AEC-Q101 qualification.
  • Efficient switching in high-frequency applications.
  • Small signal and low-power switching circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002NXAKR? The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current (ID) of the 2N7002NXAKR? The continuous drain current is 300 mA.
  3. What is the typical threshold voltage (VGSth) of the 2N7002NXAKR? The typical threshold voltage is 1.6 V.
  4. What package type is used for the 2N7002NXAKR? The 2N7002NXAKR is packaged in a SOT23-3 (SC-70, SOT-323) package.
  5. Is the 2N7002NXAKR qualified for automotive use? Yes, it is AEC-Q101 qualified.
  6. What is the maximum junction temperature (Tj) of the 2N7002NXAKR? The maximum junction temperature is 150 °C.
  7. What is the typical input capacitance (Ciss) of the 2N7002NXAKR? The typical input capacitance is 33 pF.
  8. What is the typical output capacitance (Coss) of the 2N7002NXAKR? The typical output capacitance is 7 pF.
  9. What is the maximum power dissipation (Ptot) of the 2N7002NXAKR? The maximum power dissipation is 350 mW.
  10. Is the 2N7002NXAKR suitable for high-frequency applications? Yes, it is designed for efficient switching in high-frequency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.43 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):265mW (Ta), 1.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002NXAKR 2N7002NXBKR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta), 300mA (Tc) 270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.43 nC @ 4.5 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 10 V 23.6 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 265mW (Ta), 1.33W (Tc) 310mW (Ta), 1.67W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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