2N7002NXBKR
  • Share:

Nexperia USA Inc. 2N7002NXBKR

Manufacturer No:
2N7002NXBKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002NXBKR, produced by Nexperia USA Inc., is a 60V N-channel Trench MOSFET designed for high-performance applications. This component utilizes trench MOSFET technology, which enhances its switching speed and reliability. Encapsulated in a compact SOT23 surface-mounted package, it is ideal for integration into a wide range of electronic devices. The 2N7002NXBKR is particularly suited for applications requiring fast switching and low power loss, making it a versatile choice for various electronic designs.

Key Specifications

Parameter Value
Voltage (Vds) 60 V
Drain Current (Id) 300 mA
Package SOT23
Gate Threshold Voltage (Vgs(th)) 0.8 V to 3 V
On-Resistance (Rds(on)) Typically 7.5 Ω
Switching Speed Very fast switching

Key Features

  • Suitable for logic level gate drive sources, enabling operation at lower voltage levels commonly found in digital circuits.
  • Very fast switching speed, making it ideal for high-speed switching applications.
  • Trench MOSFET technology, which improves device performance, reliability, and durability.
  • Compact SOT23 surface-mounted package, facilitating efficient use of space in PCB designs.

Applications

  • High-speed switching applications.
  • Interface with microcontrollers and other digital logic circuits.
  • Amplifiers and oscillators.
  • General-purpose switching in electronic devices.

Q & A

  1. What is the maximum voltage rating of the 2N7002NXBKR MOSFET?

    The maximum voltage rating is 60 V.

  2. What is the maximum drain current of the 2N7002NXBKR?

    The maximum drain current is 300 mA.

  3. What package type is the 2N7002NXBKR available in?

    The 2N7002NXBKR is available in a SOT23 package.

  4. Why is the 2N7002NXBKR suitable for logic level gate drive sources?

    It is suitable because it can operate at lower voltage levels commonly found in digital circuits.

  5. What technology does the 2N7002NXBKR use?

    The 2N7002NXBKR uses trench MOSFET technology.

  6. What are the benefits of using trench MOSFET technology in the 2N7002NXBKR?

    The benefits include improved performance, reliability, and durability, along with reduced on-resistance and faster switching speeds.

  7. What types of applications is the 2N7002NXBKR ideal for?

    It is ideal for high-speed switching applications, interfacing with microcontrollers, and general-purpose switching in electronic devices.

  8. How does the compact SOT23 package benefit the design of PCBs?

    The compact package facilitates efficient use of space in PCB designs.

  9. What is the typical on-resistance (Rds(on)) of the 2N7002NXBKR?

    The typical on-resistance is 7.5 Ω.

  10. Is the 2N7002NXBKR RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.22
3,756

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number 2N7002NXBKR 2N7002NXAKR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta), 330mA (Tc) 190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 0.43 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 20 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 265mW (Ta), 1.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

BZX84-C6V2/DG/B4R
BZX84-C6V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 6.2V 250MW TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC807-16LZ
BC807-16LZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PMST3904/ZLF
PMST3904/ZLF
Nexperia USA Inc.
PMST3904/ZLF
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP