2N7002NXBKR
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Nexperia USA Inc. 2N7002NXBKR

Manufacturer No:
2N7002NXBKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002NXBKR, produced by Nexperia USA Inc., is a 60V N-channel Trench MOSFET designed for high-performance applications. This component utilizes trench MOSFET technology, which enhances its switching speed and reliability. Encapsulated in a compact SOT23 surface-mounted package, it is ideal for integration into a wide range of electronic devices. The 2N7002NXBKR is particularly suited for applications requiring fast switching and low power loss, making it a versatile choice for various electronic designs.

Key Specifications

Parameter Value
Voltage (Vds) 60 V
Drain Current (Id) 300 mA
Package SOT23
Gate Threshold Voltage (Vgs(th)) 0.8 V to 3 V
On-Resistance (Rds(on)) Typically 7.5 Ω
Switching Speed Very fast switching

Key Features

  • Suitable for logic level gate drive sources, enabling operation at lower voltage levels commonly found in digital circuits.
  • Very fast switching speed, making it ideal for high-speed switching applications.
  • Trench MOSFET technology, which improves device performance, reliability, and durability.
  • Compact SOT23 surface-mounted package, facilitating efficient use of space in PCB designs.

Applications

  • High-speed switching applications.
  • Interface with microcontrollers and other digital logic circuits.
  • Amplifiers and oscillators.
  • General-purpose switching in electronic devices.

Q & A

  1. What is the maximum voltage rating of the 2N7002NXBKR MOSFET?

    The maximum voltage rating is 60 V.

  2. What is the maximum drain current of the 2N7002NXBKR?

    The maximum drain current is 300 mA.

  3. What package type is the 2N7002NXBKR available in?

    The 2N7002NXBKR is available in a SOT23 package.

  4. Why is the 2N7002NXBKR suitable for logic level gate drive sources?

    It is suitable because it can operate at lower voltage levels commonly found in digital circuits.

  5. What technology does the 2N7002NXBKR use?

    The 2N7002NXBKR uses trench MOSFET technology.

  6. What are the benefits of using trench MOSFET technology in the 2N7002NXBKR?

    The benefits include improved performance, reliability, and durability, along with reduced on-resistance and faster switching speeds.

  7. What types of applications is the 2N7002NXBKR ideal for?

    It is ideal for high-speed switching applications, interfacing with microcontrollers, and general-purpose switching in electronic devices.

  8. How does the compact SOT23 package benefit the design of PCBs?

    The compact package facilitates efficient use of space in PCB designs.

  9. What is the typical on-resistance (Rds(on)) of the 2N7002NXBKR?

    The typical on-resistance is 7.5 Ω.

  10. Is the 2N7002NXBKR RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002NXBKR 2N7002NXAKR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta), 330mA (Tc) 190mA (Ta), 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 0.43 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 20 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 265mW (Ta), 1.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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