2N7002KQBZ
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Nexperia USA Inc. 2N7002KQBZ

Manufacturer No:
2N7002KQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
2N7002KQB/SOT8015/DFN1110D-3
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002KQBZ is a small signal N-channel MOSFET produced by Nexperia USA Inc. This device is part of the 2N7002 series, known for its high performance and versatility in various electronic applications. The 2N7002KQBZ is particularly suited for logic level gate drive sources and features trench MOSFET technology, which enhances its switching speed and efficiency.

Key Specifications

ParameterValueUnit
Voltage Rating (Vds)60V
Continuous Drain Current (Id)300mA
On-Resistance (Rds(on))Typically 2.0 Ω at Vgs = 4.5 V, Id = 200 mAΩ
Threshold Voltage (Vgs(th))Typically 1.0 to 2.5 VV
Package TypeSOT23
Junction-to-Ambient Thermal Resistance (Rja)Typically 300 °C/W°C/W
ESD ProtectionYes
RoHS ComplianceYes

Key Features

  • Suitable for logic level gate drive sources
  • Very fast switching due to trench MOSFET technology
  • Low on-resistance (Rds(on)) for efficient operation
  • Surface mount package (SOT23) for compact designs
  • ESD protected for enhanced reliability
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras, personal digital assistants, and cell phones

Q & A

  1. What is the voltage rating of the 2N7002KQBZ MOSFET?
    The voltage rating (Vds) of the 2N7002KQBZ is 60 V.
  2. What is the continuous drain current of the 2N7002KQBZ?
    The continuous drain current (Id) is 300 mA.
  3. What is the typical on-resistance of the 2N7002KQBZ?
    The typical on-resistance (Rds(on)) is 2.0 Ω at Vgs = 4.5 V, Id = 200 mA.
  4. What package type does the 2N7002KQBZ come in?
    The 2N7002KQBZ comes in a SOT23 package.
  5. Is the 2N7002KQBZ ESD protected?
    Yes, the 2N7002KQBZ is ESD protected.
  6. Is the 2N7002KQBZ RoHS compliant?
    Yes, the 2N7002KQBZ is RoHS compliant.
  7. What are some common applications of the 2N7002KQBZ?
    Common applications include low side load switch, level shift circuits, DC-DC converters, and portable electronics.
  8. What is the junction-to-ambient thermal resistance of the 2N7002KQBZ?
    The junction-to-ambient thermal resistance (Rja) is typically 300 °C/W.
  9. Does the 2N7002KQBZ support logic level gate drive sources?
    Yes, it is suitable for logic level gate drive sources.
  10. What technology does the 2N7002KQBZ use?
    The 2N7002KQBZ uses trench MOSFET technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:720mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:850mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.92 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:28 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):420mW (Ta), 4.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:DFN1110D-3
Package / Case:3-XDFN Exposed Pad
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