2N7002BKVL
  • Share:

Nexperia USA Inc. 2N7002BKVL

Manufacturer No:
2N7002BKVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 350MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BKVL is a 60 V, 350 mA N-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and reliability. The 2N7002BKVL is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is a constraint.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Continuous Drain Current) 350 mA
VGS(th) (Gate Threshold Voltage) 1.1 - 2.1 V
RDS(on) (On-State Drain-Source Resistance) 1.6 Ω
PD (Maximum Power Dissipation) 445 mW
VGS (Gate-Source Voltage) -20 to +20 V
Package Type SOT23 (TO-236AB)
Mounting Type Surface Mount

Key Features

  • Logic-level compatible: Ensures compatibility with a wide range of logic levels, making it versatile for various applications.
  • Very fast switching: Offers high-speed switching capabilities, ideal for high-frequency applications.
  • Trench MOSFET technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • ESD protection up to 2 kV: Provides robust protection against electrostatic discharge, enhancing the component's reliability.
  • AEC-Q101 qualified: Meets the stringent requirements of the Automotive Electronics Council (AEC), ensuring suitability for automotive applications.

Applications

  • Relay driver: Suitable for driving relays in various electronic systems.
  • High-speed line driver: Ideal for applications requiring fast signal transmission.
  • Low-side load switch: Can be used as a switch in low-side configurations.
  • Switching circuits: Applicable in various switching circuits due to its fast switching capabilities.
  • Automotive and industrial applications: Given its AEC-Q101 qualification, it is suitable for use in automotive and industrial environments.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002BKVL?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current of the 2N7002BKVL?

    The continuous drain current (ID) is 350 mA.

  3. What is the gate threshold voltage range of the 2N7002BKVL?

    The gate threshold voltage (VGS(th)) ranges from 1.1 V to 2.1 V.

  4. What is the on-state drain-source resistance of the 2N7002BKVL?

    The on-state drain-source resistance (RDS(on)) is 1.6 Ω.

  5. What is the maximum power dissipation of the 2N7002BKVL?

    The maximum power dissipation (PD) is 445 mW.

  6. What type of package does the 2N7002BKVL come in?

    The 2N7002BKVL comes in a SOT23 (TO-236AB) package.

  7. Is the 2N7002BKVL AEC-Q101 qualified?

    Yes, the 2N7002BKVL is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What is the ESD protection level of the 2N7002BKVL?

    The 2N7002BKVL has ESD protection up to 2 kV.

  9. What are some common applications of the 2N7002BKVL?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  10. Is the 2N7002BKVL compliant with environmental regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives, and does not contain REACH SVHC substances or PFAS.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.26
769

Please send RFQ , we will respond immediately.

Same Series
2N7002BK,215
2N7002BK,215
MOSFET N-CH 60V 350MA TO236AB

Similar Products

Part Number 2N7002BKVL 2N7002CKVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 1.3 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 55 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 370mW (Ta) 350mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP