2N7002CKVL
  • Share:

Nexperia USA Inc. 2N7002CKVL

Manufacturer No:
2N7002CKVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002BK is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is known for its high performance, reliability, and compatibility with various applications.

Key Specifications

Parameter Value Unit
Type N-channel enhancement mode
VDS (max) 60 V
VGS (max) 20 V
VGS(th) (typ) 2.5 V
ID (max) 0.35 A
Tj (max) 150 °C
RDS(on) (max) @ VGS = 10 V 1.6 Ω
RDS(on) (max) @ VGS = 5 V 2 Ω
QG(tot) (typ) @ VGS = 4.5 V 0.5 nC
Ptot (max) 0.44 W
ESD Protection Up to 2 kV
AEC-Q101 Qualified Yes

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for low RDS(on)
  • ESD protection up to 2 kV
  • AEC-Q101 qualified for automotive applications
  • Low input and output leakage
  • Halogen-free and lead-free according to Nexperia's definitions
  • Compliant with RoHS, REACH, and ELV directives

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • PWM applications
  • Automotive and industrial control systems
  • Power management in consumer and mobile devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002BK?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the maximum drain current (ID) of the 2N7002BK?

    The maximum drain current (ID) is 0.35 A.

  3. What is the typical gate-threshold voltage (VGS(th)) of the 2N7002BK?

    The typical gate-threshold voltage (VGS(th)) is 2.5 V.

  4. Is the 2N7002BK ESD protected?

    Yes, the 2N7002BK has ESD protection up to 2 kV.

  5. Is the 2N7002BK AEC-Q101 qualified?

    Yes, the 2N7002BK is AEC-Q101 qualified for automotive applications.

  6. What package type is the 2N7002BK available in?

    The 2N7002BK is available in the SOT23 (TO-236AB) package.

  7. Is the 2N7002BK compliant with RoHS and REACH directives?

    Yes, the 2N7002BK is compliant with RoHS, REACH, and ELV directives.

  8. What are some common applications of the 2N7002BK?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  9. What is the maximum junction temperature (Tj) of the 2N7002BK?

    The maximum junction temperature (Tj) is 150 °C.

  10. What is the typical total gate charge (QG(tot)) of the 2N7002BK?

    The typical total gate charge (QG(tot)) at VGS = 4.5 V is 0.5 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:55 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
125

Please send RFQ , we will respond immediately.

Same Series
2N7002CKVL
2N7002CKVL
MOSFET N-CH 60V 300MA TO236AB

Similar Products

Part Number 2N7002CKVL 2N7002BKVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 55 pF @ 25 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 370mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN
BZX84-C33
BZX84-C33
Nexperia USA Inc.
BZX84 SERIES - VOLTAGE REGULATOR