2N7002HV-TP
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Micro Commercial Co 2N7002HV-TP

Manufacturer No:
2N7002HV-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
N-CHANNEL MOSFET SOT-23
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The 2N7002HV-TP is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Micro Commercial Components. This MOSFET utilizes Trench MOSFET technology and is packaged in a surface-mount SOT-23 (SC-59, TO-236) package. It is designed for high-efficiency power management applications and is known for its fast switching speed and low on-state resistance.

Key Specifications

Parameter Symbol Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID VGS = 10V, TA = 25°C 210 mA
Pulsed Drain Current IDM tp ≤ 10 µs, TA = 25°C 1.2 A
Total Power Dissipation Ptot TA = 25°C 0.83 W
Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 300mA 2.8 7.5 Ω
Gate-Source Threshold Voltage VGS(th) ID = 0.25mA, VDS = VGS 1.0 2.5 4.0 V
Junction Temperature Tj -55 150 °C
Storage Temperature Tstg -55 150 °C

Key Features

  • Suitable for logic level gate drive sources
  • Very fast switching speed
  • Surface-mounted package (SOT-23)
  • Trench MOSFET technology for low on-state resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Halogen and antimony free, RoHS compliant
  • Lead-free finish
  • Moisture Sensitivity Level 1
  • Epoxy meets UL 94 V-0 flammability rating

Applications

  • Logic level translators
  • High-speed line drivers
  • Motor control
  • Power management functions

Q & A

  1. What is the maximum drain-source voltage of the 2N7002HV-TP?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical drain-source on-resistance (RDS(on)) of the 2N7002HV-TP?

    The typical drain-source on-resistance (RDS(on)) is 2.8 Ω at VGS = 10V and ID = 300mA.

  3. What is the gate-source threshold voltage range of the 2N7002HV-TP?

    The gate-source threshold voltage (VGS(th)) range is from 1.0 V to 4.0 V.

  4. What is the maximum continuous drain current of the 2N7002HV-TP at 25°C?

    The maximum continuous drain current (ID) is 210 mA at VGS = 10V and TA = 25°C.

  5. What is the thermal resistance from junction to ambient for the 2N7002HV-TP?

    The thermal resistance from junction to ambient (RθJA) is approximately 115°C/W when mounted on a printed-circuit board.

  6. Is the 2N7002HV-TP RoHS compliant?
  7. What is the storage temperature range for the 2N7002HV-TP?

    The storage temperature range (Tstg) is from -55°C to 150°C.

  8. What are the typical applications of the 2N7002HV-TP?

    Typical applications include logic level translators, high-speed line drivers, motor control, and power management functions.

  9. What package type does the 2N7002HV-TP come in?

    The 2N7002HV-TP comes in a SOT-23 (SC-59, TO-236) surface-mount package.

  10. Is the 2N7002HV-TP halogen and antimony free?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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