IRLML0060TRPBF
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Infineon Technologies IRLML0060TRPBF

Manufacturer No:
IRLML0060TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2.7A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML0060TRPBF is a high-performance N-Channel MOSFET produced by Infineon Technologies. It belongs to the StrongIRFET™ power MOSFET family, which is optimized for low RDS(on) and high current capability. This MOSFET is packaged in a SOT-23 format, making it suitable for a variety of applications where space is a constraint. The device is known for its reliability and efficiency, particularly in low-frequency applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)60V
Current Rating (Id)2.7A
On-Resistance (Rds(on))92mΩ @ 10V
Power Dissipation (Pd)1.25W
Threshold Voltage (Vth)2.5V @ 25μA
Package TypeSOT-23
Assembly TypeSMT Assembly
ECCNEAR99

Key Features

  • Low on-resistance (Rds(on)) of 92mΩ @ 10V, enhancing efficiency in power applications.
  • High current capability of 2.7A, making it suitable for demanding applications.
  • Compact SOT-23 package, ideal for space-constrained designs.
  • Low threshold voltage of 2.5V @ 25μA, facilitating easy switching.
  • High power dissipation of 1.25W, ensuring reliable operation under various conditions.

Applications

The IRLML0060TRPBF MOSFET is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other low-frequency power applications.
  • General-purpose switching and power management in electronic devices.

Q & A

  1. What is the voltage rating of the IRLML0060TRPBF MOSFET?
    The voltage rating (Vds) of the IRLML0060TRPBF MOSFET is 60V.
  2. What is the current rating of the IRLML0060TRPBF MOSFET?
    The current rating (Id) of the IRLML0060TRPBF MOSFET is 2.7A.
  3. What is the on-resistance (Rds(on)) of the IRLML0060TRPBF MOSFET?
    The on-resistance (Rds(on)) of the IRLML0060TRPBF MOSFET is 92mΩ @ 10V.
  4. What is the power dissipation (Pd) of the IRLML0060TRPBF MOSFET?
    The power dissipation (Pd) of the IRLML0060TRPBF MOSFET is 1.25W.
  5. What is the threshold voltage (Vth) of the IRLML0060TRPBF MOSFET?
    The threshold voltage (Vth) of the IRLML0060TRPBF MOSFET is 2.5V @ 25μA.
  6. What is the package type of the IRLML0060TRPBF MOSFET?
    The package type of the IRLML0060TRPBF MOSFET is SOT-23.
  7. What is the assembly type of the IRLML0060TRPBF MOSFET?
    The assembly type of the IRLML0060TRPBF MOSFET is SMT Assembly.
  8. What is the ECCN classification of the IRLML0060TRPBF MOSFET?
    The ECCN classification of the IRLML0060TRPBF MOSFET is EAR99.
  9. In what types of applications is the IRLML0060TRPBF MOSFET commonly used?
    The IRLML0060TRPBF MOSFET is commonly used in power supplies, DC-DC converters, motor control systems, audio amplifiers, and other low-frequency power applications.
  10. Where can I find the datasheet for the IRLML0060TRPBF MOSFET?
    You can find the datasheet for the IRLML0060TRPBF MOSFET on the official Infineon Technologies website, as well as on distributor websites such as Digi-Key and JLCPCB.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:92mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML0060TRPBF IRLML2060TRPBF IRLML0030TRPBF IRLML0040TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) 1.2A (Ta) 5.3A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 92mOhm @ 2.7A, 10V 480mOhm @ 1.2A, 10V 27mOhm @ 5.2A, 10V 56mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25µA 2.5V @ 25µA 2.3V @ 25µA 2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 4.5 V 0.67 nC @ 4.5 V 2.6 nC @ 4.5 V 3.9 nC @ 4.5 V
Vgs (Max) ±16V ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 25 V 64 pF @ 25 V 382 pF @ 15 V 266 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 1.25W (Ta) 1.25W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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