Overview
The IPW60R017C7XKSA1 is a high-performance N-Channel Power MOSFET produced by Infineon Technologies. This component is part of the CoolMOS C7 product range, known for its enhanced efficiency and ruggedness. It is designed for use in various high-power applications, including hard and soft switching scenarios such as PFC (Power Factor Correction) and high-performance LLC (Line Level Converter) topologies.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Voltage Rating (Vds) | 600 V |
| Current Rating (Id) | 109 A |
| On-Resistance (Rds(on)) | 0.015 ohm |
| Package Type | TO-247, Through Hole |
| Gate-Source Threshold Voltage (Vgs(th)) | 3.5 V |
| Maximum Power Dissipation (Pd) | 446 W |
| Number of Pins | 3 |
| Maximum Junction Temperature (Tj) | 150°C |
Key Features
- Increased MOSFET dv/dt ruggedness to 120V/ns, enabling faster switching and higher efficiency.
- Best in class FOM (RDS(on)*Eoss and RDS(on)*Qg), leading to increased efficiency due to lower switching losses.
- Qualified for industrial grade applications according to JEDEC standards (J-STD20 and JESD22).
- Higher power density solutions due to smaller packages.
- Supports higher switching frequencies without loss in efficiency due to low Eoss and Qg.
Applications
The IPW60R017C7XKSA1 is suitable for a variety of high-power applications, including:
- Power Factor Correction (PFC) circuits.
- High-performance LLC (Line Level Converter) topologies.
- Industrial power supplies.
- Motor control and drive systems.
- Renewable energy systems such as solar and wind power inverters.
Q & A
- What is the voltage rating of the IPW60R017C7XKSA1 MOSFET?
The voltage rating of the IPW60R017C7XKSA1 MOSFET is 600 V. - What is the current rating of this MOSFET?
The current rating of the IPW60R017C7XKSA1 MOSFET is 109 A. - What is the on-resistance (Rds(on)) of this component?
The on-resistance (Rds(on)) of the IPW60R017C7XKSA1 MOSFET is 0.015 ohm. - What package type does the IPW60R017C7XKSA1 come in?
The IPW60R017C7XKSA1 comes in a TO-247, Through Hole package. - What is the maximum junction temperature for this MOSFET?
The maximum junction temperature for the IPW60R017C7XKSA1 MOSFET is 150°C. - Is the IPW60R017C7XKSA1 qualified for industrial grade applications?
Yes, the IPW60R017C7XKSA1 is qualified for industrial grade applications according to JEDEC standards (J-STD20 and JESD22). - What are some typical applications for the IPW60R017C7XKSA1?
Typical applications include PFC circuits, high-performance LLC topologies, industrial power supplies, motor control and drive systems, and renewable energy systems. - What is the dv/dt ruggedness of this MOSFET?
The dv/dt ruggedness of the IPW60R017C7XKSA1 MOSFET is 120V/ns. - How does the IPW60R017C7XKSA1 improve system efficiency?
The IPW60R017C7XKSA1 improves system efficiency through lower switching losses due to its best-in-class FOM (RDS(on)*Eoss and RDS(on)*Qg) and higher power density solutions. - Can the IPW60R017C7XKSA1 support high switching frequencies?
Yes, the IPW60R017C7XKSA1 can support higher switching frequencies without loss in efficiency due to its low Eoss and Qg.
