IPT015N10N5ATMA1
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Infineon Technologies IPT015N10N5ATMA1

Manufacturer No:
IPT015N10N5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 300A 8HSOF
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The IPT015N10N5ATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, part of their OptiMOS™ 5 series. This device is optimized for high current applications up to 300 A and is packaged in the TO-Leadless (TOLL) package, which offers a significantly reduced footprint and height compared to traditional D²PAK 7-pin packages. This compact design makes it ideal for applications where space is limited, such as in rack or blade servers.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-Resistance) 1.5 mΩ
ID (Continuous Drain Current) 353 A
ID,pulse (Pulsed Drain Current) 1412 A
EAS (Avalanche Energy, Single Pulse) 775 mJ
VGS (Gate-Source Voltage) -20 to 20 V
Ptot (Power Dissipation) 375 W
TJ (Junction Temperature) -55 to 175 °C

Key Features

  • Optimized for high switching frequency and synchronous rectification.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance (RDS(on)).
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Output capacitance reduction of up to 44% and RDS(on) reduction of up to 43% from previous generation.

Applications

  • Forklifts and light electric vehicles (LEV).
  • Power tools.
  • Point-of-loads (POL).
  • Telecom and e-fuses.
  • Rack or blade servers due to its compact design.

Q & A

  1. What is the maximum drain-source voltage of the IPT015N10N5ATMA1?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the on-resistance (RDS(on)) of this MOSFET?

    The on-resistance (RDS(on)) is 1.5 mΩ.

  3. What is the continuous drain current (ID) rating?

    The continuous drain current (ID) is 353 A at TC = 25°C.

  4. What are the benefits of using the OptiMOS™ 5 series?

    The benefits include highest system efficiency, reduced switching and conduction losses, less paralleling required, increased power density, and low voltage overshoot.

  5. Is the IPT015N10N5ATMA1 RoHS compliant?
  6. What is the operating temperature range of this MOSFET?

    The operating temperature range is -55°C to 175°C.

  7. What package type is used for the IPT015N10N5ATMA1?

    The package type is TO-Leadless (TOLL).

  8. How does the TOLL package benefit the design?

    The TOLL package offers a 60% smaller footprint and a 50% reduced height compared to D²PAK 7-pin packages, enabling very compact designs.

  9. Is the IPT015N10N5ATMA1 suitable for high-frequency switching applications?
  10. What is the avalanche energy rating of the IPT015N10N5ATMA1?

    The avalanche energy rating is 775 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:211 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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In Stock

$8.08
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