IPD60R180P7SE8228AUMA1
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Infineon Technologies IPD60R180P7SE8228AUMA1

Manufacturer No:
IPD60R180P7SE8228AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 18A TO252-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The IPD60R180P7SE8228AUMA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. It is part of the 600V CoolMOS™ P7 superjunction (SJ) MOSFET series, which is designed to balance high energy efficiency with ease of use in the design process. This MOSFET is optimized for various power management applications, offering excellent figures of merit (FOM) and robust features such as ESD ruggedness and an integrated gate resistor.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)18 A (Tc)
Power Dissipation (Pd)72 W (Tc)
Package TypePG-TO252-3 (Surface Mount)
ESD Ruggedness≥ 2 kV (HBM class 2)
Integrated Gate ResistorYes
Rugged Body DiodeYes

Key Features

  • High Efficiency: Excellent figures of merit (FOM) with low RDS(on) and QG enabling higher efficiency.
  • ESD Ruggedness: ≥ 2 kV (HBM class 2) to prevent ESD failures in manufacturing environments.
  • Integrated Gate Resistor: Reduces MOSFET oscillation sensitivity.
  • Rugged Body Diode: Excellent ruggedness during hard commutation in LLC topology.
  • Wide Portfolio: Available in both through-hole and surface mount packages, and in standard and industrial grades.

Applications

  • TV Power Supply
  • Industrial SMPS (Switch-Mode Power Supplies)
  • Server Power Supplies
  • Telecom Power Supplies
  • Lighting Systems

Q & A

  1. What is the voltage rating of the IPD60R180P7SE8228AUMA1 MOSFET?
    The voltage rating is 600 V.
  2. What is the current rating of this MOSFET?
    The current rating is 18 A (Tc).
  3. What package type does this MOSFET use?
    The package type is PG-TO252-3 (Surface Mount).
  4. Does the IPD60R180P7SE8228AUMA1 have integrated ESD protection?
    Yes, it has ESD ruggedness of ≥ 2 kV (HBM class 2).
  5. Is there an integrated gate resistor in this MOSFET?
    Yes, it includes an integrated gate resistor.
  6. What are the key applications for this MOSFET?
    Key applications include TV power supply, industrial SMPS, server power supplies, telecom power supplies, and lighting systems.
  7. What are the benefits of the CoolMOS™ P7 series?
    The benefits include high efficiency, ease of use, and robust features such as ESD ruggedness and an integrated gate resistor.
  8. Is the IPD60R180P7SE8228AUMA1 suitable for both hard and resonant switching topologies?
    Yes, it is suitable for both hard and resonant switching topologies such as PFC and LLC.
  9. What is the power dissipation rating of this MOSFET?
    The power dissipation rating is 72 W (Tc).
  10. Are there different grades available for this MOSFET?
    Yes, both standard and industrial grades are available.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IPD60R180P7SE8228AUMA1 IPD60R280P7SE8228AUMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V 280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V 761 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 72W (Tc) 53W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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