BSC007N04LS6ATMA1
  • Share:

Infineon Technologies BSC007N04LS6ATMA1

Manufacturer No:
BSC007N04LS6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A TDSON-8-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC007N04LS6ATMA1 is a high-performance N-Channel power MOSFET from Infineon Technologies, part of the OptiMOS™ 6 family. This device is optimized for various applications, including synchronous rectification in switched mode power supplies and other high-power circuits. It is known for its excellent electrical characteristics and robust design, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)100 A
On-State Resistance (Rds(on))620 µΩ
Package TypeTDSON (8-pin)
Operating Temperature Range-55°C to 175°C
Maximum Power Dissipation188 W (at Tc)

Key Features

  • High current capability of up to 100 A
  • Low on-state resistance (Rds(on)) of 620 µΩ
  • High power dissipation of up to 188 W at Tc
  • Wide operating temperature range from -55°C to 175°C
  • Surface mount TDSON package for efficient thermal management
  • Optimized for synchronous rectification and other high-power applications

Applications

  • Synchronous rectification in switched mode power supplies
  • High-power DC-DC converters
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Server and data center power supplies

Q & A

  1. What is the voltage rating of the BSC007N04LS6ATMA1 MOSFET? The voltage rating is 40 V.
  2. What is the maximum continuous drain current of this MOSFET? The maximum continuous drain current is 100 A.
  3. What is the on-state resistance (Rds(on)) of this MOSFET? The on-state resistance is 620 µΩ.
  4. What package type does the BSC007N04LS6ATMA1 come in? It comes in an 8-pin TDSON package.
  5. What is the operating temperature range of this MOSFET? The operating temperature range is from -55°C to 175°C.
  6. What is the maximum power dissipation of this MOSFET? The maximum power dissipation is up to 188 W at Tc.
  7. What are some common applications for this MOSFET? Common applications include synchronous rectification, high-power DC-DC converters, motor control, and power factor correction circuits.
  8. Why is the TDSON package used for this MOSFET? The TDSON package is used for its efficient thermal management and surface mount capability.
  9. Is this MOSFET suitable for high-power circuits? Yes, it is optimized for high-power circuits and applications.
  10. Where can I find detailed specifications and datasheets for this MOSFET? Detailed specifications and datasheets can be found on the official Infineon Technologies website, as well as on distributor websites like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:381A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):188W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.81
165

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BCP54-16E6433
BCP54-16E6433
Infineon Technologies
TRANS NPN 45V 1A SOT223
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
TLD5098ELXUMA1
TLD5098ELXUMA1
Infineon Technologies
IC LED DRIVER CTRLR PWM 14SSOP
BTM7752GXUMA1
BTM7752GXUMA1
Infineon Technologies
IC MOTOR DRIVER 5.5V-28V 36DSO
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI
FM25L16B-GTR
FM25L16B-GTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC