BSC007N04LS6ATMA1
  • Share:

Infineon Technologies BSC007N04LS6ATMA1

Manufacturer No:
BSC007N04LS6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A TDSON-8-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC007N04LS6ATMA1 is a high-performance N-Channel power MOSFET from Infineon Technologies, part of the OptiMOS™ 6 family. This device is optimized for various applications, including synchronous rectification in switched mode power supplies and other high-power circuits. It is known for its excellent electrical characteristics and robust design, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)100 A
On-State Resistance (Rds(on))620 µΩ
Package TypeTDSON (8-pin)
Operating Temperature Range-55°C to 175°C
Maximum Power Dissipation188 W (at Tc)

Key Features

  • High current capability of up to 100 A
  • Low on-state resistance (Rds(on)) of 620 µΩ
  • High power dissipation of up to 188 W at Tc
  • Wide operating temperature range from -55°C to 175°C
  • Surface mount TDSON package for efficient thermal management
  • Optimized for synchronous rectification and other high-power applications

Applications

  • Synchronous rectification in switched mode power supplies
  • High-power DC-DC converters
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Server and data center power supplies

Q & A

  1. What is the voltage rating of the BSC007N04LS6ATMA1 MOSFET? The voltage rating is 40 V.
  2. What is the maximum continuous drain current of this MOSFET? The maximum continuous drain current is 100 A.
  3. What is the on-state resistance (Rds(on)) of this MOSFET? The on-state resistance is 620 µΩ.
  4. What package type does the BSC007N04LS6ATMA1 come in? It comes in an 8-pin TDSON package.
  5. What is the operating temperature range of this MOSFET? The operating temperature range is from -55°C to 175°C.
  6. What is the maximum power dissipation of this MOSFET? The maximum power dissipation is up to 188 W at Tc.
  7. What are some common applications for this MOSFET? Common applications include synchronous rectification, high-power DC-DC converters, motor control, and power factor correction circuits.
  8. Why is the TDSON package used for this MOSFET? The TDSON package is used for its efficient thermal management and surface mount capability.
  9. Is this MOSFET suitable for high-power circuits? Yes, it is optimized for high-power circuits and applications.
  10. Where can I find detailed specifications and datasheets for this MOSFET? Detailed specifications and datasheets can be found on the official Infineon Technologies website, as well as on distributor websites like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:381A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):188W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.81
165

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS70-06WE6327
BAS70-06WE6327
Infineon Technologies
SCHOTTKY DIODE
BAV 199 B6327
BAV 199 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV 99S H6827
BAV 99S H6827
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC807-25WE6327
BC807-25WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
IRF9540NPBF
IRF9540NPBF
Infineon Technologies
MOSFET P-CH 100V 23A TO220AB
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
BSS83PH6327XTSA1
BSS83PH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
AUIR3313STRL
AUIR3313STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK