BSS138-13-F
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Diodes Incorporated BSS138-13-F

Manufacturer No:
BSS138-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V SOT23 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138-13-F is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to offer high efficiency and superior switching performance, making it ideal for various power management applications. It is packaged in a SOT-23-3 surface mount package, which is compatible with automated assembly processes and ensures easy installation. The MOSFET is fully RoHS compliant, halogen and antimony free, and qualified to JEDEC standards for high reliability, including AEC-Q101 for automotive applications.

Key Specifications

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 200 mA
Drive Voltage (Max Rds On, Min Rds On) 10 V
Rds On (Max) @ Id, Vgs 3.5 Ω @ 220 mA, 10 V
Vgs(th) (Max) @ Id 1.5 V @ 250 µA
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V
Power Dissipation (Max) 300 mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case SOT-23-3

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • AEC-Q101 qualified for automotive applications

Applications

The BSS138-13-F is suitable for a variety of high-efficiency power management applications, including:

  • Systems and load switches
  • Automotive applications requiring specific change control and high reliability
  • General-purpose switching applications where low on-resistance and fast switching speeds are critical

Q & A

  1. What is the drain to source voltage (Vdss) of the BSS138-13-F?

    The drain to source voltage (Vdss) is 50 V.

  2. What is the continuous drain current (Id) at 25°C for the BSS138-13-F?

    The continuous drain current (Id) at 25°C is 200 mA.

  3. What is the maximum on-resistance (Rds On) of the BSS138-13-F?

    The maximum on-resistance (Rds On) is 3.5 Ω at 220 mA and Vgs = 10 V.

  4. What is the gate threshold voltage (Vgs(th)) of the BSS138-13-F?

    The gate threshold voltage (Vgs(th)) is 1.5 V at Id = 250 µA.

  5. Is the BSS138-13-F RoHS compliant?
  6. What is the operating temperature range of the BSS138-13-F?

    The operating temperature range is -55°C to 150°C (TJ).

  7. What package type is the BSS138-13-F available in?

    The BSS138-13-F is packaged in a SOT-23-3 surface mount package.

  8. Is the BSS138-13-F suitable for automotive applications?
  9. What are the key features of the BSS138-13-F?

    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  10. Where can I find detailed specifications and datasheets for the BSS138-13-F?

    Detailed specifications and datasheets can be found on the Diodes Incorporated website, as well as on distributor sites like Mouser and Avaq.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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