BSS123Q-13
  • Share:

Diodes Incorporated BSS123Q-13

Manufacturer No:
BSS123Q-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
BSS FAMILY SOT23 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123Q-13 is a high-performance N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to meet the stringent requirements of various applications, including automotive, industrial, and consumer electronics. It features low on-resistance, high speed switching, and low threshold voltage, making it suitable for reliable power management in demanding environments.

Key Specifications

Parameter Value Unit
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current at Tc=25°C 0.17 A
Rds On - Drain-Source Resistance at Vgs = 10V 6 Ω
Vgs - Gate-Source Voltage -20 to +20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
Pd - Power Dissipation 0.3 W
Package SOT-23
RoHS Status RoHS-conform

Key Features

  • Low On-Resistance: The BSS123Q-13 features low on-resistance, making it suitable for high-frequency switching applications.
  • High Speed Switching: This device is designed for fast switching speeds, ensuring reliable operation in demanding power management applications.
  • Low Threshold Voltage: The BSS123Q-13 has a low threshold voltage, making it suitable for battery-powered equipment and other applications where power efficiency is critical.
  • Low Input Capacitance: Reduces the gate drive requirements and improves the overall efficiency of the system.
  • Fast Switching Speed: Ensures reliable operation in high-speed switching applications.
  • Low Input/Output Leakage: Minimizes power loss and enhances system reliability.
  • High Drain-Source Voltage Rating: Provides robust performance in high-voltage applications.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
  • Halogen and Antimony Free: A “green” device that is environmentally friendly.

Applications

The BSS123Q-13 is suitable for various applications that require reliable power management, including:

  • Battery-Powered Equipment: Ideal for devices that require efficient power management.
  • Audio Amplifiers: Enhances performance in audio applications with its low on-resistance and high speed switching.
  • DC-DC Converters: Suitable for use in power supplies and DC-DC conversion circuits.
  • Power Supplies: Reliable performance in power supply units.
  • Aerospace: Meets the stringent requirements of aerospace applications.
  • Automotive: AEC-Q101 qualified, making it suitable for automotive applications.
  • Industrial Control Systems: Used in various industrial control and automation systems.
  • Medical Devices: Reliable performance in medical equipment.

Q & A

  1. What is the drain-source breakdown voltage of the BSS123Q-13?

    The drain-source breakdown voltage (Vds) of the BSS123Q-13 is 100V.

  2. What is the continuous drain current of the BSS123Q-13 at 25°C?

    The continuous drain current (Id) at 25°C is 0.17A.

  3. What is the on-resistance of the BSS123Q-13 at Vgs = 10V?

    The on-resistance (Rds On) at Vgs = 10V is 6Ω.

  4. What is the gate-source threshold voltage of the BSS123Q-13?

    The gate-source threshold voltage (Vgs th) is 2V.

  5. What is the operating temperature range of the BSS123Q-13?

    The operating temperature range is from -55°C to 150°C.

  6. Is the BSS123Q-13 RoHS compliant?
  7. What package type does the BSS123Q-13 come in?

    The BSS123Q-13 comes in a SOT-23 package.

  8. What are some typical applications of the BSS123Q-13?

    Typical applications include battery-powered equipment, audio amplifiers, DC-DC converters, and power supplies.

  9. Is the BSS123Q-13 suitable for automotive applications?
  10. How do I connect the BSS123Q-13 in a circuit?

    Connect the drain pin to the power supply, the source pin to the load or ground, and apply a voltage signal to the gate pin to control the MOSFET's operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.04
20,214

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSS123Q-13 BSS123K-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 1.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 38 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
1N5819HW-7-F
1N5819HW-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
MUR160-T
MUR160-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
BAV70W-7-F-79
BAV70W-7-F-79
Diodes Incorporated
DIODE GEN PURPOSE
BZX84C9V1S-7
BZX84C9V1S-7
Diodes Incorporated
DIODE ZENER ARRAY 9.1V SOT363
BZX84C22-7
BZX84C22-7
Diodes Incorporated
DIODE ZENER 22V 300MW SOT23-3
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BZX84C39TA
BZX84C39TA
Diodes Incorporated
DIODE ZENER 39V 350MW SOT23-3
MMBT3904FZ-7B
MMBT3904FZ-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
2N7002KX-7
2N7002KX-7
Diodes Incorporated
MOSFET N-CH 60V SOT23-3