Overview
The BSS123K-13, produced by Diodes Incorporated, is an N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. This device is part of the BSS123 family and is packaged in a SOT23 case, making it suitable for compact and low-power designs. The BSS123K-13 is characterized by its low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage, ensuring reliable and efficient performance in various applications.
Key Specifications
Characteristic | Symbol | Value | Unit | Test Condition |
---|---|---|---|---|
Drain-Source Voltage | VDS | 100 | V | VGS = 0V, ID = 250µA |
Gate-Source Voltage | VGS | ±20 | V | |
Continuous Drain Current | ID | 230 mA @ VGS = 10V, 184 mA @ VGS = 10V and TA = +70°C | ||
Pulsed Drain Current | IDM | 600 mA (10µs Pulse, Duty Cycle = 1%) | ||
Gate Threshold Voltage | VGS(TH) | 0.8 - 2.0 V | VDS = VGS, ID = 1mA | |
Static Drain-Source On-Resistance | RDS(ON) | 3.6 - 6 Ω @ VGS = 10V, ID = 0.17A; 10 Ω @ VGS = 4.5V, ID = 0.17A | ||
Input Capacitance | Ciss | 38 pF | VDS = 50V, VGS = 0V, f = 1.0MHz | |
Thermal Resistance, Junction to Ambient | RθJA | 264 °C/W (Steady State) | ||
Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 °C |
Key Features
- Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
- Low Input Capacitance: Minimizes the impact on high-frequency operations.
- Fast Switching Speed: Ideal for applications requiring quick and efficient switching.
- Low Input/Output Leakage: Reduces power loss and improves overall efficiency.
- High Drain-Source Voltage Rating: Supports up to 100V, making it suitable for a wide range of applications.
- ESD Protected Gate: Enhances reliability by protecting against electrostatic discharge.
- Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
- Halogen and Antimony Free: Compliant with green device standards.
Applications
- Small Servo Motor Control: Suitable for controlling small servo motors due to its low power consumption and fast switching speed.
- Power MOSFET Gate Drivers: Ideal for driving power MOSFETs in various power management circuits.
- Switching Applications: Used in switching circuits where high efficiency and fast switching are critical.
Q & A
- What is the maximum drain-source voltage of the BSS123K-13?
The maximum drain-source voltage (VDS) is 100V.
- What is the gate-source threshold voltage range of the BSS123K-13?
The gate-source threshold voltage (VGS(TH)) ranges from 0.8V to 2.0V.
- What is the continuous drain current rating at 25°C and 70°C?
The continuous drain current (ID) is 230mA at 25°C and 184mA at 70°C, both at VGS = 10V.
- What is the thermal resistance from junction to ambient for the BSS123K-13?
The thermal resistance from junction to ambient (RθJA) is 264 °C/W in steady state conditions.
- Is the BSS123K-13 RoHS compliant?
Yes, the BSS123K-13 is totally lead-free and fully RoHS compliant.
- What are the typical applications of the BSS123K-13?
Typical applications include small servo motor control, power MOSFET gate drivers, and switching applications.
- What is the input capacitance of the BSS123K-13?
The input capacitance (Ciss) is 38 pF at VDS = 50V, VGS = 0V, and f = 1.0MHz.
- What is the operating and storage temperature range for the BSS123K-13?
The operating and storage temperature range is -55°C to +150°C.
- Is the BSS123K-13 ESD protected?
Yes, the BSS123K-13 has an ESD protected gate.
- What package type is the BSS123K-13 available in?
The BSS123K-13 is available in a SOT23 package.