BSS123K-13
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Diodes Incorporated BSS123K-13

Manufacturer No:
BSS123K-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
BSS FAMILY SOT23 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123K-13, produced by Diodes Incorporated, is an N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. This device is part of the BSS123 family and is packaged in a SOT23 case, making it suitable for compact and low-power designs. The BSS123K-13 is characterized by its low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage, ensuring reliable and efficient performance in various applications.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDS 100 V VGS = 0V, ID = 250µA
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 230 mA @ VGS = 10V, 184 mA @ VGS = 10V and TA = +70°C
Pulsed Drain Current IDM 600 mA (10µs Pulse, Duty Cycle = 1%)
Gate Threshold Voltage VGS(TH) 0.8 - 2.0 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON) 3.6 - 6 Ω @ VGS = 10V, ID = 0.17A; 10 Ω @ VGS = 4.5V, ID = 0.17A
Input Capacitance Ciss 38 pF VDS = 50V, VGS = 0V, f = 1.0MHz
Thermal Resistance, Junction to Ambient RθJA 264 °C/W (Steady State)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
  • Low Input Capacitance: Minimizes the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for applications requiring quick and efficient switching.
  • Low Input/Output Leakage: Reduces power loss and improves overall efficiency.
  • High Drain-Source Voltage Rating: Supports up to 100V, making it suitable for a wide range of applications.
  • ESD Protected Gate: Enhances reliability by protecting against electrostatic discharge.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
  • Halogen and Antimony Free: Compliant with green device standards.

Applications

  • Small Servo Motor Control: Suitable for controlling small servo motors due to its low power consumption and fast switching speed.
  • Power MOSFET Gate Drivers: Ideal for driving power MOSFETs in various power management circuits.
  • Switching Applications: Used in switching circuits where high efficiency and fast switching are critical.

Q & A

  1. What is the maximum drain-source voltage of the BSS123K-13?

    The maximum drain-source voltage (VDS) is 100V.

  2. What is the gate-source threshold voltage range of the BSS123K-13?

    The gate-source threshold voltage (VGS(TH)) ranges from 0.8V to 2.0V.

  3. What is the continuous drain current rating at 25°C and 70°C?

    The continuous drain current (ID) is 230mA at 25°C and 184mA at 70°C, both at VGS = 10V.

  4. What is the thermal resistance from junction to ambient for the BSS123K-13?

    The thermal resistance from junction to ambient (RθJA) is 264 °C/W in steady state conditions.

  5. Is the BSS123K-13 RoHS compliant?

    Yes, the BSS123K-13 is totally lead-free and fully RoHS compliant.

  6. What are the typical applications of the BSS123K-13?

    Typical applications include small servo motor control, power MOSFET gate drivers, and switching applications.

  7. What is the input capacitance of the BSS123K-13?

    The input capacitance (Ciss) is 38 pF at VDS = 50V, VGS = 0V, and f = 1.0MHz.

  8. What is the operating and storage temperature range for the BSS123K-13?

    The operating and storage temperature range is -55°C to +150°C.

  9. Is the BSS123K-13 ESD protected?

    Yes, the BSS123K-13 has an ESD protected gate.

  10. What package type is the BSS123K-13 available in?

    The BSS123K-13 is available in a SOT23 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:38 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123K-13 BSS123Q-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 10 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 50 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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