1N4004G-T
  • Share:

Diodes Incorporated 1N4004G-T

Manufacturer No:
1N4004G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004G-T is a standard rectifier diode produced by Diodes Incorporated. It belongs to the 1N4001 through 1N4007 series, known for their high current capability and low forward voltage drop. This diode is designed for general-purpose rectification and is suitable for a wide range of applications, including consumer electronics, computing, communications, industrial, and automotive markets.

Key Specifications

Attribute Value
Average Rectified Current (Max) 1 A
Forward Voltage 1 V @ 1 A
Peak Forward Surge Current 30 A
Peak Repetitive Reverse Voltage (VRRM) 400 V
Maximum Reverse Current 5 µA @ 400 V
Reverse Recovery Time (trr) 2000 ns
Total Capacitance (CT) 8 pF
Package Style DO-41 (DO-204AL)
Mounting Method Through Hole
Operating and Storage Temperature Range -65°C to +175°C

Key Features

  • High current capability with a maximum average rectified current of 1 A.
  • Low forward voltage drop of 1 V at 1 A.
  • Surge overload rating to 30 A peak.
  • Glass passivated die construction for reliability.
  • Lead-free finish, RoHS compliant.
  • Operating and storage temperature range of -65°C to +175°C.

Applications

The 1N4004G-T diode is versatile and can be used in various applications, including:

  • Consumer electronics for power supply and rectification needs.
  • Computing and communications equipment for reliable power management.
  • Industrial applications requiring high current and low voltage drop rectification.
  • Automotive systems for robust and reliable power rectification.

Q & A

  1. What is the maximum average rectified current of the 1N4004G-T diode?

    The maximum average rectified current is 1 A.

  2. What is the forward voltage drop of the 1N4004G-T diode at 1 A?

    The forward voltage drop is 1 V at 1 A.

  3. What is the peak forward surge current rating of the 1N4004G-T diode?

    The peak forward surge current rating is 30 A.

  4. What is the maximum repetitive reverse voltage (VRRM) of the 1N4004G-T diode?

    The maximum repetitive reverse voltage is 400 V.

  5. What is the package style and mounting method of the 1N4004G-T diode?

    The package style is DO-41 (DO-204AL), and the mounting method is through-hole.

  6. Is the 1N4004G-T diode RoHS compliant?

    Yes, the 1N4004G-T diode is RoHS compliant with a lead-free finish.

  7. What is the operating and storage temperature range of the 1N4004G-T diode?

    The operating and storage temperature range is -65°C to +175°C.

  8. What are some typical applications of the 1N4004G-T diode?

    Typical applications include consumer electronics, computing, communications, industrial, and automotive systems.

  9. What is the total capacitance (CT) of the 1N4004G-T diode?

    The total capacitance is 8 pF.

  10. Is the 1N4004G-T diode AEC qualified?

    No, the 1N4004G-T diode is not AEC qualified, but it supports PPAP for automotive applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.32
1,736

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4006G-T
1N4006G-T
DIODE GEN PURP 800V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4005G-T
1N4005G-T
DIODE GEN PURP 600V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4004GL-T
1N4004GL-T
DIODE GEN PURP 400V 1A DO41
1N4005GL-T
1N4005GL-T
DIODE GEN PURP 600V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4004G-T 1N4005G-T 1N4004GL-T 1N4004L-T 1N4003G-T 1N4004-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete Obsolete Active Not For New Designs
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 400 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs - 2 µs -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

BAV99W-7
BAV99W-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT323
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAT54SW-7-G
BAT54SW-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT323
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BZX84C2V4W-7-F
BZX84C2V4W-7-F
Diodes Incorporated
DIODE ZENER 2.4V 200MW SOT323
BZX84C36-7
BZX84C36-7
Diodes Incorporated
DIODE ZENER 36V 300MW SOT23-3
BZX84C2V4-7
BZX84C2V4-7
Diodes Incorporated
DIODE ZENER 2.4V 300MW SOT23-3
BZX84C10-7-F-31
BZX84C10-7-F-31
Diodes Incorporated
DIODE ZENER 10V 300MW SOT23
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23