1N4002G-T
  • Share:

Diodes Incorporated 1N4002G-T

Manufacturer No:
1N4002G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002G-T is a standard recovery rectifier diode produced by Diodes Incorporated. This component is part of the 1N4001G to 1N4007G series, which are glass passivated rectifier diodes known for their high current capability and low forward voltage drop. The 1N4002G-T is specifically designed to handle a peak repetitive reverse voltage of 100V and an average rectified output current of 1A, making it suitable for a variety of applications requiring reliable rectification.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM100V
Working Peak Reverse VoltageVRWM100V
RMS Reverse VoltageVR(RMS)70V
Average Rectified Output Current @ TA = 75°CIO1.0A
Non-Repetitive Peak Forward Surge CurrentIFSM30A
Forward Voltage @ IF = 1.0AVFM1.0V
Peak Reverse Current @ TA = 25°CIRM5.0 µAµA
Typical Reverse Recovery Timetrr2.0 µsµs
Typical Total CapacitanceCT8.0 pFpF
Thermal Resistance Junction to AmbientRθJA100 °C/W°C/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +175 °C°C
Package TypeDO-41 Plastic

Key Features

  • Glass Passivated Die Construction: Ensures high reliability and durability.
  • High Current Capability and Low Forward Voltage Drop: Suitable for applications requiring efficient rectification.
  • Surge Overload Rating to 30A Peak: Provides protection against transient surges.
  • Lead Free Finish, RoHS Compliant: Meets environmental standards and regulations.
  • Tin Plated Leads Solderable per MIL-STD-202, Method 208: Easy to integrate into various circuits.

Applications

The 1N4002G-T rectifier diode is versatile and can be used in a wide range of applications, including:

  • Power Supplies: For rectification and voltage regulation.
  • DC Power Systems: In systems requiring reliable DC power conversion.
  • Automotive Systems: For various automotive electrical systems.
  • Consumer Electronics: In devices such as TVs, radios, and other electronic appliances.
  • Industrial Control Systems: For rectification and protection in industrial control circuits.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4002G-T diode?
    The peak repetitive reverse voltage of the 1N4002G-T diode is 100V.
  2. What is the average rectified output current of the 1N4002G-T at 75°C?
    The average rectified output current is 1.0A.
  3. What is the non-repetitive peak forward surge current rating of the 1N4002G-T?
    The non-repetitive peak forward surge current rating is 30A.
  4. What is the forward voltage drop at 1.0A for the 1N4002G-T?
    The forward voltage drop at 1.0A is 1.0V.
  5. Is the 1N4002G-T RoHS compliant?
    Yes, the 1N4002G-T is lead-free and RoHS compliant.
  6. What is the typical reverse recovery time of the 1N4002G-T?
    The typical reverse recovery time is 2.0 µs.
  7. What is the thermal resistance junction to ambient for the 1N4002G-T?
    The thermal resistance junction to ambient is 100 °C/W.
  8. What is the operating and storage temperature range for the 1N4002G-T?
    The operating and storage temperature range is -65 to +175 °C.
  9. What type of package does the 1N4002G-T come in?
    The 1N4002G-T comes in a DO-41 Plastic package.
  10. Is the 1N4002G-T suitable for high surge applications?
    Yes, it has a surge overload rating to 30A peak.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.35
24

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4006G-T
1N4006G-T
DIODE GEN PURP 800V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4005G-T
1N4005G-T
DIODE GEN PURP 600V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4001GL-T
1N4001GL-T
DIODE GEN PURP 50V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4005GL-T
1N4005GL-T
DIODE GEN PURP 600V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4002G-T 1N4003G-T 1N4002GL-T 1N4002L-T 1N4001G-T 1N4002-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete Obsolete Active Not For New Designs
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V 100 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs - 2 µs -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

BAT54SW-7-G
BAT54SW-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT323
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
MUR160-T
MUR160-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
BZX84C3V3S-7-F
BZX84C3V3S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.3V SOT363
BZX84C20TS-7-F
BZX84C20TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT363
BZX84C22TS-7-F
BZX84C22TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 22V SOT363
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZX84B11-7-F
BZX84B11-7-F
Diodes Incorporated
DIODE ZENER 11V 350MW SOT23
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C8V2T-7-F
BZX84C8V2T-7-F
Diodes Incorporated
DIODE ZENER 8.2V 150MW SOT523
BC857AT-7-F
BC857AT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523