1N4001GL-T
  • Share:

Diodes Incorporated 1N4001GL-T

Manufacturer No:
1N4001GL-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GL-T is a 1.0A glass passivated rectifier diode produced by Diodes Incorporated. This component is part of the 1N4001G to 1N4007G series, known for its high current capability and low forward voltage drop. The device is packaged in a DO-41 plastic case and is RoHS compliant, making it suitable for a wide range of applications where environmental regulations are a concern.

Key Specifications

CharacteristicSymbol1N4001GUnit
Peak Repetitive Reverse VoltageVRRM50V
Working Peak Reverse VoltageVRWM50V
RMS Reverse VoltageVR(RMS)35V
Average Rectified Output Current @ TA = 75°CIO1.0A
Non-Repetitive Peak Forward Surge CurrentIFSM30A
Forward Voltage @ IF = 1.0AVFM1.0V
Peak Reverse Current @ TA = 25°CIRM5.0 µAµA
Typical Reverse Recovery Timetrr2.0 µsµs
Typical Total CapacitanceCT8.0 pFpF
Thermal Resistance Junction to AmbientRθJA100 °C/W°C/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +175 °C°C

Key Features

  • Glass passivated die construction
  • High current capability and low forward voltage drop
  • Surge overload rating to 30A peak
  • Lead-free finish, RoHS compliant
  • DO-41 plastic package with UL flammability classification rating 94V-0
  • Moisture sensitivity level 1 per J-STD-020
  • Tin-plated leads solderable per MIL-STD-202, Method 208
  • Cathode band polarity and type number marking

Applications

The 1N4001GL-T rectifier diode is suitable for various applications, including:

  • General-purpose rectification in power supplies and DC power systems
  • Free-wheeling diodes in inductive circuits
  • Rectifier circuits in automotive and industrial systems
  • Circuits requiring high surge current capability

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GL-T? The peak repetitive reverse voltage is 50V.
  2. What is the average rectified output current of the 1N4001GL-T at 75°C? The average rectified output current is 1.0A.
  3. What is the non-repetitive peak forward surge current of the 1N4001GL-T? The non-repetitive peak forward surge current is 30A.
  4. What is the forward voltage drop at 1.0A for the 1N4001GL-T? The forward voltage drop is 1.0V.
  5. Is the 1N4001GL-T RoHS compliant? Yes, the 1N4001GL-T is RoHS compliant.
  6. What is the operating temperature range of the 1N4001GL-T? The operating temperature range is -65 to +175°C.
  7. What is the typical reverse recovery time of the 1N4001GL-T? The typical reverse recovery time is 2.0 µs.
  8. What is the thermal resistance junction to ambient for the 1N4001GL-T? The thermal resistance junction to ambient is 100 °C/W.
  9. What type of package does the 1N4001GL-T come in? The 1N4001GL-T comes in a DO-41 plastic package.
  10. Is the 1N4001GL-T suitable for automotive applications? While it can be used in some automotive contexts, for specific automotive requirements, it is recommended to use parts qualified to AEC-Q100/101/104/200 standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4006G-T
1N4006G-T
DIODE GEN PURP 800V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4001GL-T
1N4001GL-T
DIODE GEN PURP 50V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4004GL-T
1N4004GL-T
DIODE GEN PURP 400V 1A DO41
1N4005GL-T
1N4005GL-T
DIODE GEN PURP 600V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4001GL-T 1N4001L-T 1N4002GL-T 1N4001G-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

BAS40-06Q-7-F
BAS40-06Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
BAV170T-7
BAV170T-7
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT523
BAS40-7-F
BAS40-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
BAS20Q-13-F
BAS20Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS16LPQ-7
BAS16LPQ-7
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84C3V0Q-13-F
BZX84C3V0Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C10-7-F-31
BZX84C10-7-F-31
Diodes Incorporated
DIODE ZENER 10V 300MW SOT23
BSS123ATA
BSS123ATA
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353