1N4001GL-T
  • Share:

Diodes Incorporated 1N4001GL-T

Manufacturer No:
1N4001GL-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GL-T is a 1.0A glass passivated rectifier diode produced by Diodes Incorporated. This component is part of the 1N4001G to 1N4007G series, known for its high current capability and low forward voltage drop. The device is packaged in a DO-41 plastic case and is RoHS compliant, making it suitable for a wide range of applications where environmental regulations are a concern.

Key Specifications

CharacteristicSymbol1N4001GUnit
Peak Repetitive Reverse VoltageVRRM50V
Working Peak Reverse VoltageVRWM50V
RMS Reverse VoltageVR(RMS)35V
Average Rectified Output Current @ TA = 75°CIO1.0A
Non-Repetitive Peak Forward Surge CurrentIFSM30A
Forward Voltage @ IF = 1.0AVFM1.0V
Peak Reverse Current @ TA = 25°CIRM5.0 µAµA
Typical Reverse Recovery Timetrr2.0 µsµs
Typical Total CapacitanceCT8.0 pFpF
Thermal Resistance Junction to AmbientRθJA100 °C/W°C/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +175 °C°C

Key Features

  • Glass passivated die construction
  • High current capability and low forward voltage drop
  • Surge overload rating to 30A peak
  • Lead-free finish, RoHS compliant
  • DO-41 plastic package with UL flammability classification rating 94V-0
  • Moisture sensitivity level 1 per J-STD-020
  • Tin-plated leads solderable per MIL-STD-202, Method 208
  • Cathode band polarity and type number marking

Applications

The 1N4001GL-T rectifier diode is suitable for various applications, including:

  • General-purpose rectification in power supplies and DC power systems
  • Free-wheeling diodes in inductive circuits
  • Rectifier circuits in automotive and industrial systems
  • Circuits requiring high surge current capability

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GL-T? The peak repetitive reverse voltage is 50V.
  2. What is the average rectified output current of the 1N4001GL-T at 75°C? The average rectified output current is 1.0A.
  3. What is the non-repetitive peak forward surge current of the 1N4001GL-T? The non-repetitive peak forward surge current is 30A.
  4. What is the forward voltage drop at 1.0A for the 1N4001GL-T? The forward voltage drop is 1.0V.
  5. Is the 1N4001GL-T RoHS compliant? Yes, the 1N4001GL-T is RoHS compliant.
  6. What is the operating temperature range of the 1N4001GL-T? The operating temperature range is -65 to +175°C.
  7. What is the typical reverse recovery time of the 1N4001GL-T? The typical reverse recovery time is 2.0 µs.
  8. What is the thermal resistance junction to ambient for the 1N4001GL-T? The thermal resistance junction to ambient is 100 °C/W.
  9. What type of package does the 1N4001GL-T come in? The 1N4001GL-T comes in a DO-41 plastic package.
  10. Is the 1N4001GL-T suitable for automotive applications? While it can be used in some automotive contexts, for specific automotive requirements, it is recommended to use parts qualified to AEC-Q100/101/104/200 standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4006G-T
1N4006G-T
DIODE GEN PURP 800V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4005G-T
1N4005G-T
DIODE GEN PURP 600V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4001GL-T
1N4001GL-T
DIODE GEN PURP 50V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4004GL-T
1N4004GL-T
DIODE GEN PURP 400V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4001GL-T 1N4001L-T 1N4002GL-T 1N4001G-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
MBR10100CS2TR-E1
MBR10100CS2TR-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
LL4148-7
LL4148-7
Diodes Incorporated
DIODE GP 75V 150MA MINI MELF
BAS40-7-F-31
BAS40-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZX84C2V4TS-7-F
BZX84C2V4TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 2.4V SOT363
BZX84C36S-7-F-79
BZX84C36S-7-F-79
Diodes Incorporated
DIODE ZENER
BZT52HC6V2WF-7
BZT52HC6V2WF-7
Diodes Incorporated
DIODE ZENER 6.2V 375MW SOD123F
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP
74HCT595S16-13
74HCT595S16-13
Diodes Incorporated
HC HIGH PIN COUNT SO-16