1N4004GL-T
  • Share:

Diodes Incorporated 1N4004GL-T

Manufacturer No:
1N4004GL-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GL-T is a general-purpose rectifier diode produced by Diodes Incorporated. This diode is designed to handle high reverse breakdown voltage and current, making it suitable for a wide range of applications. It is housed in a DO-41 package and is known for its reliability and efficiency in various electrical circuits.

Key Specifications

Parameter Value Unit
Maximum Average Forward Current (IF(AV)) 1 A
Maximum Repetitive Reverse Voltage (VRRM) 400 V
Maximum Forward Voltage Drop (VF) 1.1 V
Reverse Recovery Time (trr) 2 μs
Maximum Forward Surge Current (IFSM) 30 A
Package Type DO-41 -
RoHS Compliance Yes -

Key Features

  • High reverse breakdown voltage of 400V.
  • High current capability of 1A.
  • Low forward voltage drop of 1.1V.
  • Fast recovery time of 2μs for high efficiency.
  • Housed in a DO-41 package.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power supply circuits.
  • Rectifier circuits.
  • Voltage regulation.
  • Overvoltage protection.
  • General-purpose rectification in various electronic devices.

Q & A

  1. What is the maximum average forward current of the 1N4004GL-T diode?

    The maximum average forward current is 1A.

  2. What is the maximum repetitive reverse voltage of the 1N4004GL-T diode?

    The maximum repetitive reverse voltage is 400V.

  3. What is the package type of the 1N4004GL-T diode?

    The package type is DO-41.

  4. Is the 1N4004GL-T diode RoHS compliant?

    Yes, the 1N4004GL-T diode is RoHS compliant.

  5. What is the forward voltage drop of the 1N4004GL-T diode?

    The maximum forward voltage drop is 1.1V.

  6. What is the reverse recovery time of the 1N4004GL-T diode?

    The reverse recovery time is 2μs.

  7. What are some common applications of the 1N4004GL-T diode?

    Common applications include power supply circuits, rectifier circuits, voltage regulation, and overvoltage protection.

  8. What is the maximum forward surge current of the 1N4004GL-T diode?

    The maximum forward surge current is 30A.

  9. Why is the 1N4004GL-T diode used in various electronic devices?

    The 1N4004GL-T diode is used due to its high reliability, high current and voltage handling capabilities, and fast recovery time, making it suitable for general-purpose rectification.

  10. Can the 1N4004GL-T diode be used in high-frequency applications?

    While it can be used in some high-frequency applications, its primary use is in general-purpose rectification and low to medium frequency circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
460

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4005G-T
1N4005G-T
DIODE GEN PURP 600V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4001GL-T
1N4001GL-T
DIODE GEN PURP 50V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4004GL-T
1N4004GL-T
DIODE GEN PURP 400V 1A DO41
1N4005GL-T
1N4005GL-T
DIODE GEN PURP 600V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4004GL-T 1N4004L-T 1N4005GL-T 1N4002GL-T 1N4003GL-T 1N4004G-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS40V-7
BAS40V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT563
BAT54BRW-7
BAT54BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAT54ST-7
BAT54ST-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BZX84C3V6S-7-F
BZX84C3V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.6V SOT363
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C33-7
BZX84C33-7
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C30-7-F-31
BZX84C30-7-F-31
Diodes Incorporated
DIODE ZENER 30V 300MW SOT23
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
74LVC1G07FW4-7
74LVC1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN