1N4004GL-T
  • Share:

Diodes Incorporated 1N4004GL-T

Manufacturer No:
1N4004GL-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GL-T is a general-purpose rectifier diode produced by Diodes Incorporated. This diode is designed to handle high reverse breakdown voltage and current, making it suitable for a wide range of applications. It is housed in a DO-41 package and is known for its reliability and efficiency in various electrical circuits.

Key Specifications

Parameter Value Unit
Maximum Average Forward Current (IF(AV)) 1 A
Maximum Repetitive Reverse Voltage (VRRM) 400 V
Maximum Forward Voltage Drop (VF) 1.1 V
Reverse Recovery Time (trr) 2 μs
Maximum Forward Surge Current (IFSM) 30 A
Package Type DO-41 -
RoHS Compliance Yes -

Key Features

  • High reverse breakdown voltage of 400V.
  • High current capability of 1A.
  • Low forward voltage drop of 1.1V.
  • Fast recovery time of 2μs for high efficiency.
  • Housed in a DO-41 package.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power supply circuits.
  • Rectifier circuits.
  • Voltage regulation.
  • Overvoltage protection.
  • General-purpose rectification in various electronic devices.

Q & A

  1. What is the maximum average forward current of the 1N4004GL-T diode?

    The maximum average forward current is 1A.

  2. What is the maximum repetitive reverse voltage of the 1N4004GL-T diode?

    The maximum repetitive reverse voltage is 400V.

  3. What is the package type of the 1N4004GL-T diode?

    The package type is DO-41.

  4. Is the 1N4004GL-T diode RoHS compliant?

    Yes, the 1N4004GL-T diode is RoHS compliant.

  5. What is the forward voltage drop of the 1N4004GL-T diode?

    The maximum forward voltage drop is 1.1V.

  6. What is the reverse recovery time of the 1N4004GL-T diode?

    The reverse recovery time is 2μs.

  7. What are some common applications of the 1N4004GL-T diode?

    Common applications include power supply circuits, rectifier circuits, voltage regulation, and overvoltage protection.

  8. What is the maximum forward surge current of the 1N4004GL-T diode?

    The maximum forward surge current is 30A.

  9. Why is the 1N4004GL-T diode used in various electronic devices?

    The 1N4004GL-T diode is used due to its high reliability, high current and voltage handling capabilities, and fast recovery time, making it suitable for general-purpose rectification.

  10. Can the 1N4004GL-T diode be used in high-frequency applications?

    While it can be used in some high-frequency applications, its primary use is in general-purpose rectification and low to medium frequency circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
460

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4005G-T
1N4005G-T
DIODE GEN PURP 600V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4001GL-T
1N4001GL-T
DIODE GEN PURP 50V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4004GL-T
1N4004GL-T
DIODE GEN PURP 400V 1A DO41
1N4005GL-T
1N4005GL-T
DIODE GEN PURP 600V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4004GL-T 1N4004L-T 1N4005GL-T 1N4002GL-T 1N4003GL-T 1N4004G-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

BAS20DWQ-13
BAS20DWQ-13
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MBR10100CS2TR-E1
MBR10100CS2TR-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
MURS140-13-F
MURS140-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAS20W-7-F
BAS20W-7-F
Diodes Incorporated
DIODE GEN PURP 150V 200MA SOT323
BAS16Q-13-F
BAS16Q-13-F
Diodes Incorporated
SWITCHING DIODE SOT23 T&R 10K
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84C5V6S-7-F
BZX84C5V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 5.6V SOT363
BZX84C6V8Q-13-F
BZX84C6V8Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84B4V3Q-7-F
BZX84B4V3Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BCP5616TQTA
BCP5616TQTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BC857BFZ-7B
BC857BFZ-7B
Diodes Incorporated
TRANS PNP 45V 0.1A 3DFN
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K