1N4007G-T
  • Share:

Diodes Incorporated 1N4007G-T

Manufacturer No:
1N4007G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007G-T is a 1.0A rectifier diode produced by Diodes Incorporated. This component is part of the 1N4001G to 1N4007G series, known for its high current capability and low forward voltage drop. The diode is packaged in a DO-41 plastic case, which is UL flammability classified with a rating of 94V-0. It is lead-free and RoHS compliant, making it suitable for a wide range of applications, including automotive and consumer electronics.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Average Rectified Output Current @ TA = 75°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave) IFSM 30 A
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage IRM 5.0 μA
Typical Junction Capacitance @ 1 MHz, 4V DC Cj 15 pF
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package DO-41 (DO-204AL)
Mounting Type Through Hole

Key Features

  • High current capability and low forward voltage drop
  • Surge overload rating to 30A peak
  • Low reverse leakage current
  • Lead-free finish; RoHS compliant
  • UL flammability classification rating 94V-0
  • Moisture sensitivity level 1 per J-STD-020
  • Terminals: Finish - Bright Tin. Plated leads solderable per MIL-STD-202, Method 208
  • Standard recovery time >500ns, > 200mA (Io)

Applications

The 1N4007G-T diode is suitable for various applications including:

  • Automotive systems requiring high reliability and surge protection
  • Consumer electronics where high current and low forward voltage drop are necessary
  • Power supplies and rectifier circuits
  • General-purpose rectification in industrial and commercial equipment

Q & A

  1. Q: What is the maximum repetitive peak reverse voltage of the 1N4007G-T diode?

    A: The maximum repetitive peak reverse voltage (VRRM) is 1000V.

  2. Q: What is the average rectified output current of the 1N4007G-T diode at 75°C?

    A: The average rectified output current (IO) at 75°C is 1.0A.

  3. Q: What is the non-repetitive peak forward surge current rating of the 1N4007G-T diode?

    A: The non-repetitive peak forward surge current (IFSM) is 30A for an 8.3ms single half sine-wave.

  4. Q: What is the forward voltage drop of the 1N4007G-T diode at 1.0A?

    A: The forward voltage (VFM) at 1.0A is 1.0V.

  5. Q: Is the 1N4007G-T diode RoHS compliant?

    A: Yes, the 1N4007G-T diode is lead-free and RoHS compliant.

  6. Q: What is the operating temperature range of the 1N4007G-T diode?

    A: The operating and storage temperature range is -65°C to +150°C.

  7. Q: What type of package does the 1N4007G-T diode come in?

    A: The diode is packaged in a DO-41 (DO-204AL) plastic case.

  8. Q: What is the typical junction capacitance of the 1N4007G-T diode?

    A: The typical junction capacitance (Cj) at 1 MHz and 4V DC is 15 pF.

  9. Q: Is the 1N4007G-T diode suitable for automotive applications?

    A: Yes, it is suitable for automotive applications requiring high reliability and surge protection.

  10. Q: What is the moisture sensitivity level of the 1N4007G-T diode?

    A: The moisture sensitivity level is 1 per J-STD-020.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.30
815

Please send RFQ , we will respond immediately.

Same Series
1N4007G-T
1N4007G-T
DIODE GEN PURP 1KV 1A DO41
1N4004G-T
1N4004G-T
DIODE GEN PURP 400V 1A DO41
1N4006G-T
1N4006G-T
DIODE GEN PURP 800V 1A DO41
1N4002G-T
1N4002G-T
DIODE GEN PURP 100V 1A DO41
1N4005G-T
1N4005G-T
DIODE GEN PURP 600V 1A DO41
1N4003G-T
1N4003G-T
DIODE GEN PURP 200V 1A DO41
1N4002GL-T
1N4002GL-T
DIODE GEN PURP 100V 1A DO41
1N4003GL-T
1N4003GL-T
DIODE GEN PURP 200V 1A DO41
1N4004GL-T
1N4004GL-T
DIODE GEN PURP 400V 1A DO41
1N4005GL-T
1N4005GL-T
DIODE GEN PURP 600V 1A DO41
1N4006GL-T
1N4006GL-T
DIODE GEN PURP 800V 1A DO41
1N4007GL-T
1N4007GL-T
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4007G-T 1N4007GL-T 1N4007L-T 1N4006G-T 1N4007-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Obsolete Active Not For New Designs
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF

Related Product By Brand

BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAV199TQ-7-F
BAV199TQ-7-F
Diodes Incorporated
SWITCHING STANDARD DIODE SOT523
BAT42W-7
BAT42W-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD123
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZX84C27Q-13-F
BZX84C27Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
MMBT3904T-13
MMBT3904T-13
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
2N7002-7-F
2N7002-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
2N7002W-7
2N7002W-7
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-323
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP