Overview
The CSD25501F3 is a –20V, P-channel NexFET™ power MOSFET designed and optimized by Texas Instruments for minimizing footprint in various handheld and mobile applications. This MOSFET is part of the FemtoFET™ family, known for its ultra-small footprint and low profile, making it ideal for space-constrained designs. It features an integrated 10kΩ clamp resistor and ESD protection diode, enhancing its reliability and performance. The device is lead and halogen free, and it is RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| BVDSS (Drain-to-source voltage) | VGS = 0 V, IDS = –250 μA | -20 | -20 | V | |
| IDSS (Drain-to-source leakage current) | VGS = 0 V, VDS = –16 V | -50 nA | -50 nA | ||
| IGSS (Gate-to-source leakage current) | VDS = 0 V, VGS = –6 V | -50 nA | -1 mA | ||
| VGS(th) (Gate-to-source threshold voltage) | VDS = VGS, IDS = –250 μA | -0.45 | -0.75 | -1.05 | V |
| RDS(on) (Drain-to-source on-resistance) | 64 mΩ | mΩ | |||
| Maximum Drain Current (ID) | 3.6 A | A | |||
| Maximum Operating Temperature | -55°C | 150°C | °C | ||
| Package | LGA-3 (0.6x0.7 mm) | ||||
| Moisture Sensitivity Level (MSL) | 1 |
Key Features
- Low on-resistance: 64 mΩ at VGS = 4.5 V
- Ultra-low Qg and Qgd: Minimizes switching losses
- Ultra-small footprint: 0.7 mm x 0.6 mm, low profile with a max height of 0.22 mm
- Integrated ESD protection diode: Enhances reliability against electrostatic discharge
- Lead and halogen free: Environmentally friendly and RoHS compliant
- Integrated 10kΩ clamp resistor: Allows gate voltage operation above the maximum internal gate oxide value
Applications
- Optimized for load switch applications: Ideal for switching high currents efficiently
- Battery applications: Suitable for battery management systems due to its low on-resistance and small footprint
- Handheld and mobile applications: Designed to minimize footprint in portable devices
Q & A
- What is the maximum drain-to-source voltage (BVDSS) of the CSD25501F3?
The maximum drain-to-source voltage (BVDSS) is –20 V. - What is the typical on-resistance (RDS(on)) of the CSD25501F3?
The typical on-resistance (RDS(on)) is 64 mΩ at VGS = 4.5 V. - What is the maximum drain current (ID) of the CSD25501F3?
The maximum drain current (ID) is 3.6 A. - Is the CSD25501F3 RoHS compliant?
Yes, the CSD25501F3 is RoHS compliant and lead and halogen free. - What is the package type and size of the CSD25501F3?
The package type is LGA-3 with dimensions of 0.7 mm x 0.6 mm. - Does the CSD25501F3 have integrated ESD protection?
Yes, it has an integrated ESD protection diode. - What is the operating temperature range of the CSD25501F3?
The operating temperature range is from –55°C to 150°C. - What is the moisture sensitivity level (MSL) of the CSD25501F3?
The moisture sensitivity level (MSL) is 1. - Can the CSD25501F3 be used in load switch applications?
Yes, it is optimized for load switch applications. - Is the CSD25501F3 suitable for handheld and mobile devices?
Yes, it is designed to minimize footprint in handheld and mobile applications.
