CSD25501F3T
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Texas Instruments CSD25501F3T

Manufacturer No:
CSD25501F3T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.6A 3LGA
Delivery:
Payment:
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Product Introduction

Overview

The Texas Instruments CSD25501F3T is a 20V P-Channel FemtoFET™ MOSFET designed to minimize footprint in various applications, particularly in handheld and mobile devices. This MOSFET features a low on-resistance and is optimized for switching applications. It is part of Texas Instruments' FemtoFET family, known for its compact size and high performance.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)20V
Continuous Drain Current (ID)3.6A
Maximum Power Dissipation (PD)500mW
On-Resistance (Rds(on)) @ Vgs = -4.5V64
Gate to Source Voltage (Vgs)-20V
Threshold Voltage (Vgs(th))-0.75V
Operating Temperature-55 to 150°C
Package3-LGA (0.73x0.64)
Surface MountYes
Terminal FinishNickel Gold

Key Features

  • Compact Package: The CSD25501F3T comes in a 3-LGA (0.73x0.64 mm) package, making it ideal for space-constrained applications.
  • Low On-Resistance: With an on-resistance of 64 mΩ at Vgs = -4.5V, this MOSFET minimizes power losses.
  • Built-in Diode and Resistor: The device includes a built-in diode and resistor, simplifying circuit design.
  • High Current Capability: It can handle a continuous drain current of 3.6 A.
  • Wide Operating Temperature Range: The MOSFET operates from -55°C to 150°C, making it suitable for a variety of environments.

Applications

The CSD25501F3T is designed for use in handheld and mobile devices, as well as other applications requiring compact, high-performance MOSFETs. Specific use cases include:

  • Smartphones and tablets
  • Laptops and portable computers
  • Wearable electronics
  • Power management circuits in consumer electronics

Q & A

  1. What is the maximum drain to source voltage of the CSD25501F3T?
    The maximum drain to source voltage (Vdss) is 20 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 3.6 A.
  3. What is the on-resistance of the CSD25501F3T at Vgs = -4.5V?
    The on-resistance (Rds(on)) at Vgs = -4.5V is 64 mΩ.
  4. What is the operating temperature range of this device?
    The operating temperature range is from -55°C to 150°C.
  5. What type of package does the CSD25501F3T come in?
    The CSD25501F3T comes in a 3-LGA (0.73x0.64 mm) package.
  6. Does the CSD25501F3T have built-in diodes and resistors?
    Yes, it includes built-in diodes and resistors.
  7. What is the maximum power dissipation of this MOSFET?
    The maximum power dissipation (PD) is 500 mW.
  8. What is the threshold voltage (Vgs(th)) of the CSD25501F3T?
    The threshold voltage (Vgs(th)) is -0.75 V.
  9. Is the CSD25501F3T suitable for surface mounting?
    Yes, it is suitable for surface mounting.
  10. What is the terminal finish of the CSD25501F3T?
    The terminal finish is Nickel Gold.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.33 nC @ 4.5 V
Vgs (Max):-20V
Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-LGA (0.73x0.64)
Package / Case:3-XFLGA
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Similar Products

Part Number CSD25501F3T CSD25501F3
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 76mOhm @ 400mA, 4.5V 76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.33 nC @ 4.5 V 1.33 nC @ 4.5 V
Vgs (Max) -20V -20V
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 10 V 385 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-LGA (0.73x0.64) 3-LGA (0.73x0.64)
Package / Case 3-XFLGA 3-XFLGA

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