CSD25501F3T
  • Share:

Texas Instruments CSD25501F3T

Manufacturer No:
CSD25501F3T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.6A 3LGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Texas Instruments CSD25501F3T is a 20V P-Channel FemtoFET™ MOSFET designed to minimize footprint in various applications, particularly in handheld and mobile devices. This MOSFET features a low on-resistance and is optimized for switching applications. It is part of Texas Instruments' FemtoFET family, known for its compact size and high performance.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)20V
Continuous Drain Current (ID)3.6A
Maximum Power Dissipation (PD)500mW
On-Resistance (Rds(on)) @ Vgs = -4.5V64mΩ
Gate to Source Voltage (Vgs)-20V
Threshold Voltage (Vgs(th))-0.75V
Operating Temperature-55 to 150°C
Package3-LGA (0.73x0.64)
Surface MountYes
Terminal FinishNickel Gold

Key Features

  • Compact Package: The CSD25501F3T comes in a 3-LGA (0.73x0.64 mm) package, making it ideal for space-constrained applications.
  • Low On-Resistance: With an on-resistance of 64 mΩ at Vgs = -4.5V, this MOSFET minimizes power losses.
  • Built-in Diode and Resistor: The device includes a built-in diode and resistor, simplifying circuit design.
  • High Current Capability: It can handle a continuous drain current of 3.6 A.
  • Wide Operating Temperature Range: The MOSFET operates from -55°C to 150°C, making it suitable for a variety of environments.

Applications

The CSD25501F3T is designed for use in handheld and mobile devices, as well as other applications requiring compact, high-performance MOSFETs. Specific use cases include:

  • Smartphones and tablets
  • Laptops and portable computers
  • Wearable electronics
  • Power management circuits in consumer electronics

Q & A

  1. What is the maximum drain to source voltage of the CSD25501F3T?
    The maximum drain to source voltage (Vdss) is 20 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 3.6 A.
  3. What is the on-resistance of the CSD25501F3T at Vgs = -4.5V?
    The on-resistance (Rds(on)) at Vgs = -4.5V is 64 mΩ.
  4. What is the operating temperature range of this device?
    The operating temperature range is from -55°C to 150°C.
  5. What type of package does the CSD25501F3T come in?
    The CSD25501F3T comes in a 3-LGA (0.73x0.64 mm) package.
  6. Does the CSD25501F3T have built-in diodes and resistors?
    Yes, it includes built-in diodes and resistors.
  7. What is the maximum power dissipation of this MOSFET?
    The maximum power dissipation (PD) is 500 mW.
  8. What is the threshold voltage (Vgs(th)) of the CSD25501F3T?
    The threshold voltage (Vgs(th)) is -0.75 V.
  9. Is the CSD25501F3T suitable for surface mounting?
    Yes, it is suitable for surface mounting.
  10. What is the terminal finish of the CSD25501F3T?
    The terminal finish is Nickel Gold.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.33 nC @ 4.5 V
Vgs (Max):-20V
Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-LGA (0.73x0.64)
Package / Case:3-XFLGA
0 Remaining View Similar

In Stock

$0.92
811

Please send RFQ , we will respond immediately.

Same Series
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD25501F3T CSD25501F3
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 76mOhm @ 400mA, 4.5V 76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.33 nC @ 4.5 V 1.33 nC @ 4.5 V
Vgs (Max) -20V -20V
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 10 V 385 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-LGA (0.73x0.64) 3-LGA (0.73x0.64)
Package / Case 3-XFLGA 3-XFLGA

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

LMC555CMX
LMC555CMX
Texas Instruments
IC OSC SINGLE TIMER 3MHZ 8-SOIC
TMS320C5421GGUR200
TMS320C5421GGUR200
Texas Instruments
IC DGTL SIGNL PROCESSOR 144-BGA
TUSB2046BIRHBRG4
TUSB2046BIRHBRG4
Texas Instruments
IC HUB CONTROLLER USB 32VQFN
DS90LV048ATMTCX/NOPB
DS90LV048ATMTCX/NOPB
Texas Instruments
IC RECEIVER 0/4 16TSSOP
SN65HVD72DR
SN65HVD72DR
Texas Instruments
IC TRANSCEIVER HALF 1/1 8SOIC
SN75172DWG4
SN75172DWG4
Texas Instruments
IC DRIVER 4/0 20SOIC
INA239AQDGSRQ1
INA239AQDGSRQ1
Texas Instruments
IC OPAMP GP 1 CIRCUIT 10VSSOP
THS3110IDGNR
THS3110IDGNR
Texas Instruments
IC OPAMP CFA 1 CIRCUIT 8HVSSOP
SN74AUC1G32DBVRE4
SN74AUC1G32DBVRE4
Texas Instruments
IC GATE OR 1CH 2-INP SOT23-5
BQ25713BRSNR
BQ25713BRSNR
Texas Instruments
IC BAT MON MULT-CHEM 1-4C 32WQFN
TPS3711DDCR
TPS3711DDCR
Texas Instruments
IC SUPERVISOR 1 CHANNEL TSOT23-6
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC