CSD22206WT
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Texas Instruments CSD22206WT

Manufacturer No:
CSD22206WT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 8V 5A 9DSBGA
Delivery:
Payment:
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Product Introduction

Overview

The CSD22206WT is a P-channel NexFET™ power MOSFET produced by Texas Instruments. This electronic component is designed for applications requiring high efficiency and compact size. It is particularly suited for battery-powered devices and space-constrained applications due to its low on-resistance and small form factor. The CSD22206WT is a reliable choice for engineers looking to optimize power management in their designs.

Key Specifications

ParameterValueUnitNotes
Channel TypeP-channel--
Drain-Source Voltage (VDS)-8V-
On-Resistance (RDS(on))4.7-
Package Size1.5 x 1.5mm-
Gate ChargeLow-Optimized for efficiency
ApplicationsBattery-powered devices, space-constrained designs--

Key Features

  • Low on-resistance for reduced power loss.
  • Compact 1.5mm x 1.5mm package size.
  • Optimized gate charge for high efficiency.
  • Excellent thermal performance.
  • Ideal for battery-powered and space-constrained applications.

Applications

The CSD22206WT is widely used in various applications, including battery-powered devices, portable electronics, and space-constrained designs. Its low on-resistance and small form factor make it an excellent choice for power management in consumer electronics, industrial automation, and automotive systems. The device's efficiency and reliability ensure optimal performance in demanding environments.

Q & A

1. What is the channel type of the CSD22206WT?

The CSD22206WT is a P-channel MOSFET.

2. What is the drain-source voltage rating?

The drain-source voltage (VDS) is -8V.

3. What is the on-resistance of the CSD22206WT?

The on-resistance (RDS(on)) is 4.7mΩ.

4. What is the package size of this MOSFET?

The package size is 1.5mm x 1.5mm.

5. Is the CSD22206WT suitable for battery-powered devices?

Yes, its low on-resistance and compact size make it ideal for battery-powered applications.

6. What are the key features of the CSD22206WT?

Key features include low on-resistance, small package size, optimized gate charge, and excellent thermal performance.

7. Can this MOSFET be used in automotive systems?

Yes, it is suitable for automotive applications due to its reliability and efficiency.

8. What is the gate charge of the CSD22206WT?

The gate charge is optimized for high efficiency, though specific values should be referenced from the datasheet.

9. Is the CSD22206WT available in other package sizes?

The standard package size is 1.5mm x 1.5mm. Other sizes may not be available.

10. What are the typical applications of this MOSFET?

Typical applications include portable electronics, industrial automation, and power management in consumer devices.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.6 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:2275 pF @ 4 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:9-DSBGA
Package / Case:9-UFBGA, DSBGA
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Similar Products

Part Number CSD22206WT CSD22204WT CSD22206W
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 5A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 2A, 4.5V 9.9mOhm @ 2A, 4.5V 5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA 950mV @ 250µA 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 4.5 V 24.6 nC @ 4.5 V 14.6 nC @ 4.5 V
Vgs (Max) -6V -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 2275 pF @ 4 V 1130 pF @ 4 V 2275 pF @ 4 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta) 1.7W (Ta) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 9-DSBGA 9-DSBGA 9-DSBGA
Package / Case 9-UFBGA, DSBGA 9-UFBGA, DSBGA 9-UFBGA, DSBGA

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