CSD22206WT
  • Share:

Texas Instruments CSD22206WT

Manufacturer No:
CSD22206WT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 8V 5A 9DSBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD22206WT is a P-channel NexFET™ power MOSFET produced by Texas Instruments. This electronic component is designed for applications requiring high efficiency and compact size. It is particularly suited for battery-powered devices and space-constrained applications due to its low on-resistance and small form factor. The CSD22206WT is a reliable choice for engineers looking to optimize power management in their designs.

Key Specifications

ParameterValueUnitNotes
Channel TypeP-channel--
Drain-Source Voltage (VDS)-8V-
On-Resistance (RDS(on))4.7-
Package Size1.5 x 1.5mm-
Gate ChargeLow-Optimized for efficiency
ApplicationsBattery-powered devices, space-constrained designs--

Key Features

  • Low on-resistance for reduced power loss.
  • Compact 1.5mm x 1.5mm package size.
  • Optimized gate charge for high efficiency.
  • Excellent thermal performance.
  • Ideal for battery-powered and space-constrained applications.

Applications

The CSD22206WT is widely used in various applications, including battery-powered devices, portable electronics, and space-constrained designs. Its low on-resistance and small form factor make it an excellent choice for power management in consumer electronics, industrial automation, and automotive systems. The device's efficiency and reliability ensure optimal performance in demanding environments.

Q & A

1. What is the channel type of the CSD22206WT?

The CSD22206WT is a P-channel MOSFET.

2. What is the drain-source voltage rating?

The drain-source voltage (VDS) is -8V.

3. What is the on-resistance of the CSD22206WT?

The on-resistance (RDS(on)) is 4.7mΩ.

4. What is the package size of this MOSFET?

The package size is 1.5mm x 1.5mm.

5. Is the CSD22206WT suitable for battery-powered devices?

Yes, its low on-resistance and compact size make it ideal for battery-powered applications.

6. What are the key features of the CSD22206WT?

Key features include low on-resistance, small package size, optimized gate charge, and excellent thermal performance.

7. Can this MOSFET be used in automotive systems?

Yes, it is suitable for automotive applications due to its reliability and efficiency.

8. What is the gate charge of the CSD22206WT?

The gate charge is optimized for high efficiency, though specific values should be referenced from the datasheet.

9. Is the CSD22206WT available in other package sizes?

The standard package size is 1.5mm x 1.5mm. Other sizes may not be available.

10. What are the typical applications of this MOSFET?

Typical applications include portable electronics, industrial automation, and power management in consumer devices.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.6 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:2275 pF @ 4 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:9-DSBGA
Package / Case:9-UFBGA, DSBGA
0 Remaining View Similar

In Stock

$1.42
617

Please send RFQ , we will respond immediately.

Same Series
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD22206WT CSD22204WT CSD22206W
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 5A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 2A, 4.5V 9.9mOhm @ 2A, 4.5V 5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA 950mV @ 250µA 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 4.5 V 24.6 nC @ 4.5 V 14.6 nC @ 4.5 V
Vgs (Max) -6V -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 2275 pF @ 4 V 1130 pF @ 4 V 2275 pF @ 4 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta) 1.7W (Ta) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 9-DSBGA 9-DSBGA 9-DSBGA
Package / Case 9-UFBGA, DSBGA 9-UFBGA, DSBGA 9-UFBGA, DSBGA

Related Product By Categories

2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

ADS1248IPWR
ADS1248IPWR
Texas Instruments
IC ADC 24BIT SIGMA-DELTA 28TSSOP
AM5718AABCXQ1
AM5718AABCXQ1
Texas Instruments
AM5718AABCXQ1
MUX508IDR
MUX508IDR
Texas Instruments
IC MULTIPLEXER 8CH 16SOIC
TRS208IDWR
TRS208IDWR
Texas Instruments
IC TRANSCEIVER FULL 4/4 24SOIC
TLE2062CD
TLE2062CD
Texas Instruments
IC OPAMP JFET 2 CIRCUIT 8SOIC
THS3110IDGNR
THS3110IDGNR
Texas Instruments
IC OPAMP CFA 1 CIRCUIT 8HVSSOP
THS4011IDRG4
THS4011IDRG4
Texas Instruments
IC VOLTAGE FEEDBACK 1 CIRC 8SOIC
SN74LS151NE4
SN74LS151NE4
Texas Instruments
SN74LS151 8-LINE TO 1-LINE DATA
LM3658SDX-A
LM3658SDX-A
Texas Instruments
IC BATT CHG LI-ION 1CELL 10WSON
BQ25713BRSNR
BQ25713BRSNR
Texas Instruments
IC BAT MON MULT-CHEM 1-4C 32WQFN
TL431ILPR5
TL431ILPR5
Texas Instruments
VOLTAGE REFERENCE
LP3878SD-ADJ/NOPB
LP3878SD-ADJ/NOPB
Texas Instruments
IC REG LIN POS ADJ 800MA 8WSON