CSD22206W
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Texas Instruments CSD22206W

Manufacturer No:
CSD22206W
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 8V 5A 9DSBGA
Delivery:
Payment:
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Product Introduction

Overview

The CSD22206W, manufactured by Texas Instruments, is a P-channel MOSFET designed for power management applications. This component is part of the NexFET™ power MOSFET series, known for its efficiency and compact design. The CSD22206W is housed in a DSBGA-9 package, making it suitable for space-constrained applications. Its primary market includes power management systems in consumer electronics, industrial automation, and automotive electronics. The CSD22206W stands out for its low on-resistance and high current handling capabilities, making it a competitive choice in its category.

Key Specifications

ParameterValueUnitNotes
BrandTexas Instruments--
ModelCSD22206W--
TypeP-channel MOSFET-Insulated Gate (MOSFET)
Conduction ModeEnhancement--
PackageDSBGA-9-Surface Mount
MaterialGE-P-FET-Germanium P-channel
On-Resistance5.7 mΩ-
Voltage Rating-8VV-
Gate ESD ProtectionYes--

Key Features

  • Low on-resistance (5.7 mΩ) for efficient power management.
  • Compact DSBGA-9 package ideal for space-constrained applications.
  • P-channel MOSFET with enhancement mode for versatile use.
  • Built-in gate ESD protection for enhanced reliability.
  • Suitable for high-current handling in power management systems.

Applications

The CSD22206W is widely used in various industries due to its efficient power management capabilities. In consumer electronics, it is employed in battery management systems and power supplies. In industrial automation, it is utilized in motor control and power distribution systems. The automotive sector benefits from its use in electric vehicle power systems and onboard chargers. Its compact design and high efficiency make it a preferred choice for modern electronic devices.

Q & A

1. What is the primary use of the CSD22206W?

The CSD22206W is primarily used in power management applications, including battery management, motor control, and power distribution systems.

2. What package does the CSD22206W come in?

The CSD22206W is housed in a DSBGA-9 package, which is a compact surface-mount design.

3. What is the on-resistance of the CSD22206W?

The on-resistance of the CSD22206W is 5.7 mΩ.

4. Does the CSD22206W have gate ESD protection?

Yes, the CSD22206W includes built-in gate ESD protection for enhanced reliability.

5. What type of MOSFET is the CSD22206W?

The CSD22206W is a P-channel MOSFET with enhancement mode.

6. What industries commonly use the CSD22206W?

The CSD22206W is commonly used in consumer electronics, industrial automation, and automotive electronics.

7. What is the voltage rating of the CSD22206W?

The voltage rating of the CSD22206W is -8V.

8. Is the CSD22206W suitable for high-current applications?

Yes, the CSD22206W is designed for high-current handling in power management systems.

9. What material is used in the CSD22206W?

The CSD22206W is made from Germanium P-channel material.

10. Where can I purchase the CSD22206W?

The CSD22206W can be purchased from authorized distributors of Texas Instruments, such as Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.6 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:2275 pF @ 4 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:9-DSBGA
Package / Case:9-UFBGA, DSBGA
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Similar Products

Part Number CSD22206W CSD22206WT CSD22204W
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 5A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 2A, 4.5V 5.7mOhm @ 2A, 4.5V 9.9mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA 1.05V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 4.5 V 14.6 nC @ 4.5 V 24.6 nC @ 4.5 V
Vgs (Max) -6V -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 2275 pF @ 4 V 2275 pF @ 4 V 1130 pF @ 4 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta) 1.7W (Ta) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 9-DSBGA 9-DSBGA 9-DSBGA
Package / Case 9-UFBGA, DSBGA 9-UFBGA, DSBGA 9-UFBGA, DSBGA

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