Overview
The CSD19538Q3AT is a 100-V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This device is designed to minimize conduction losses and reduce board footprint, particularly in Power over Ethernet (PoE) applications. It features a low on-resistance and ultra-low gate charge, making it highly efficient for various power management tasks. The MOSFET is packaged in a SON 3.3-mm × 3.3-mm plastic package, which is lead-free, RoHS compliant, and halogen-free.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 100 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 15 | A |
| Pulsed Drain Current (IDM) | 37 | A |
| Power Dissipation (PD) | 2.8 | W |
| Operating Junction Temperature (TJ) | -55 to 150 | °C |
| Gate Charge Total (Qg) | 4.3 | nC |
| Gate Charge Gate to Drain (Qgd) | 0.8 | nC |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V | 49 | mΩ |
| Gate-to-Source Threshold Voltage (VGS(th)) | 3.2 | V |
Key Features
- Ultra-Low Qg and Qgd for reduced switching losses
- Low-Thermal Resistance for efficient heat dissipation
- Avalanche Rated for robust operation under transient conditions
- Lead Free, RoHS Compliant, and Halogen Free for environmental sustainability
- SON 3.3-mm × 3.3-mm Plastic Package for compact design
Applications
- Power Over Ethernet (PoE)
- Power Sourcing Equipment (PSE)
- Motor Control
Q & A
- What is the maximum drain-to-source voltage of the CSD19538Q3AT?
The maximum drain-to-source voltage is 100 V.
- What is the typical on-resistance of the CSD19538Q3AT at VGS = 10 V?
The typical on-resistance is 49 mΩ.
- What are the key features of the CSD19538Q3AT?
The key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, and a compact SON package.
- What are the common applications of the CSD19538Q3AT?
Common applications include Power Over Ethernet (PoE), Power Sourcing Equipment (PSE), and motor control.
- Is the CSD19538Q3AT environmentally friendly?
- What is the maximum continuous drain current of the CSD19538Q3AT?
The maximum continuous drain current is 15 A.
- What is the operating junction temperature range of the CSD19538Q3AT?
The operating junction temperature range is -55 to 150°C.
- What is the gate charge total (Qg) of the CSD19538Q3AT?
The gate charge total (Qg) is 4.3 nC.
- What is the package type of the CSD19538Q3AT?
The package type is a SON 3.3-mm × 3.3-mm plastic package.
- Is the CSD19538Q3AT suitable for high-power applications?
