Overview
The CSD19538Q3A is a 100-V, 49-mΩ N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize conduction losses and reduce board footprint, particularly in Power over Ethernet (PoE) applications. It features a small SON 3.3-mm × 3.3-mm plastic package, making it ideal for space-constrained designs. The MOSFET is engineered to provide ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), low thermal resistance, and is avalanche rated, ensuring robust performance under various operating conditions.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS (Drain-to-Source Voltage) | VGS = 0 V, ID = 250 μA | 100 | V |
| VGS (Gate-to-Source Voltage) | ±20 | V | |
| ID (Continuous Drain Current) | Package Limited | 15 | A |
| ID (Continuous Drain Current) | Silicon Limited, TC = 25°C | 14 | A |
| IDM (Pulsed Drain Current) | Pulse duration ≤100 μs, duty cycle ≤ 1% | 37 | A |
| PD (Power Dissipation) | TC = 25°C | 2.8 | W |
| TJ, Tstg (Operating Junction Temperature, Storage Temperature) | –55 to 150 | °C | |
| VGS(th) (Gate-to-Source Threshold Voltage) | VDS = VGS, ID = 250 μA | 3.2 | V |
| RDS(on) (Drain-to-Source On Resistance) | VGS = 10 V, ID = 5 A | 49 | mΩ |
| Qg (Gate Charge Total) | VDS = 50 V, ID = 5 A | 4.3 | nC |
| Qgd (Gate Charge Gate to Drain) | 0.8 | nC |
Key Features
- Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead Free
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
Applications
- Power Over Ethernet (PoE)
- Power Sourcing Equipment (PSE)
- Motor Control
Q & A
- What is the maximum drain-to-source voltage of the CSD19538Q3A?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the typical on-resistance of the CSD19538Q3A at VGS = 10 V?
The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V is 49 mΩ.
- What is the gate charge total (Qg) of the CSD19538Q3A?
The gate charge total (Qg) is 4.3 nC.
- What are the operating temperature ranges for the CSD19538Q3A?
The operating junction temperature and storage temperature range from –55°C to 150°C.
- Is the CSD19538Q3A RoHS compliant?
- What package type is used for the CSD19538Q3A?
The CSD19538Q3A is packaged in a SON 3.3-mm × 3.3-mm plastic package.
- What are some typical applications for the CSD19538Q3A?
Typical applications include Power Over Ethernet (PoE), Power Sourcing Equipment (PSE), and Motor Control.
- What is the maximum continuous drain current for the CSD19538Q3A?
The maximum continuous drain current (ID) is 15 A (package limited) and 14 A (silicon limited at TC = 25°C).
- Is the CSD19538Q3A avalanche rated?
- What is the gate-to-source threshold voltage (VGS(th)) of the CSD19538Q3A?
The gate-to-source threshold voltage (VGS(th)) is typically 3.2 V.
