CSD18509Q5BT
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Texas Instruments CSD18509Q5BT

Manufacturer No:
CSD18509Q5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18509Q5BT is a high-performance N-channel MOSFET produced by Texas Instruments. This component is designed for power conversion applications, offering low on-resistance and high efficiency. It is housed in a VSON-CLIP-8 package, making it suitable for space-constrained designs. The CSD18509Q5BT is ideal for applications such as DC-DC converters, motor drives, and power management systems, targeting industries like automotive, industrial automation, and consumer electronics.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40V
Continuous Drain Current (ID)200A
On-Resistance (RDS(on))1.4VGS = 10V
Gate Threshold Voltage (VGS(th))1.7V
Total Gate Charge (Qg)119nCVGS = 10V
PackageVSON-CLIP-8

Key Features

  • Low on-resistance for reduced power losses.
  • High current handling capability for robust performance.
  • Compact VSON-CLIP-8 package for space-efficient designs.
  • Optimized for high-frequency switching applications.
  • Enhanced thermal performance for reliable operation.

Applications

The CSD18509Q5BT is widely used in various industries due to its high efficiency and reliability. Key applications include:

  • DC-DC Converters: Provides efficient power conversion in both step-up and step-down configurations.
  • Motor Drives: Enables precise control of motor speed and direction in industrial and automotive systems.
  • Power Management: Supports battery charging, voltage regulation, and load switching in consumer electronics.
  • Automotive Systems: Used in electric vehicles and hybrid systems for energy-efficient power distribution.

Q & A

1. What is the maximum drain-source voltage of the CSD18509Q5BT?

The maximum drain-source voltage is 40V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 1.4 mΩ at VGS = 10V.

3. What package does the CSD18509Q5BT use?

It uses the VSON-CLIP-8 package.

4. What is the continuous drain current rating?

The continuous drain current rating is 200A.

5. Is this MOSFET suitable for high-frequency switching?

Yes, it is optimized for high-frequency switching applications.

6. What are the typical applications of the CSD18509Q5BT?

Typical applications include DC-DC converters, motor drives, and power management systems.

7. What is the gate threshold voltage?

The gate threshold voltage is 1.7V.

8. Can this MOSFET be used in automotive systems?

Yes, it is suitable for automotive applications, including electric vehicles.

9. What is the total gate charge of the CSD18509Q5BT?

The total gate charge is 119 nC at VGS = 10V.

10. Does this MOSFET have enhanced thermal performance?

Yes, it is designed for enhanced thermal performance to ensure reliable operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18509Q5BT CSD18502Q5BT CSD18509Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 32A, 10V 2.3mOhm @ 30A, 10V 1.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V 33 nC @ 4.5 V 195 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13900 pF @ 20 V 5070 pF @ 20 V 13900 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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