CSD18509Q5BT
  • Share:

Texas Instruments CSD18509Q5BT

Manufacturer No:
CSD18509Q5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18509Q5BT is a high-performance N-channel MOSFET produced by Texas Instruments. This component is designed for power conversion applications, offering low on-resistance and high efficiency. It is housed in a VSON-CLIP-8 package, making it suitable for space-constrained designs. The CSD18509Q5BT is ideal for applications such as DC-DC converters, motor drives, and power management systems, targeting industries like automotive, industrial automation, and consumer electronics.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40V
Continuous Drain Current (ID)200A
On-Resistance (RDS(on))1.4VGS = 10V
Gate Threshold Voltage (VGS(th))1.7V
Total Gate Charge (Qg)119nCVGS = 10V
PackageVSON-CLIP-8

Key Features

  • Low on-resistance for reduced power losses.
  • High current handling capability for robust performance.
  • Compact VSON-CLIP-8 package for space-efficient designs.
  • Optimized for high-frequency switching applications.
  • Enhanced thermal performance for reliable operation.

Applications

The CSD18509Q5BT is widely used in various industries due to its high efficiency and reliability. Key applications include:

  • DC-DC Converters: Provides efficient power conversion in both step-up and step-down configurations.
  • Motor Drives: Enables precise control of motor speed and direction in industrial and automotive systems.
  • Power Management: Supports battery charging, voltage regulation, and load switching in consumer electronics.
  • Automotive Systems: Used in electric vehicles and hybrid systems for energy-efficient power distribution.

Q & A

1. What is the maximum drain-source voltage of the CSD18509Q5BT?

The maximum drain-source voltage is 40V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 1.4 mΩ at VGS = 10V.

3. What package does the CSD18509Q5BT use?

It uses the VSON-CLIP-8 package.

4. What is the continuous drain current rating?

The continuous drain current rating is 200A.

5. Is this MOSFET suitable for high-frequency switching?

Yes, it is optimized for high-frequency switching applications.

6. What are the typical applications of the CSD18509Q5BT?

Typical applications include DC-DC converters, motor drives, and power management systems.

7. What is the gate threshold voltage?

The gate threshold voltage is 1.7V.

8. Can this MOSFET be used in automotive systems?

Yes, it is suitable for automotive applications, including electric vehicles.

9. What is the total gate charge of the CSD18509Q5BT?

The total gate charge is 119 nC at VGS = 10V.

10. Does this MOSFET have enhanced thermal performance?

Yes, it is designed for enhanced thermal performance to ensure reliable operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.88
72

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD18509Q5BT CSD18502Q5BT CSD18509Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 32A, 10V 2.3mOhm @ 30A, 10V 1.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V 33 nC @ 4.5 V 195 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13900 pF @ 20 V 5070 pF @ 20 V 13900 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc) 3.1W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

MSC1211Y5PAGT
MSC1211Y5PAGT
Texas Instruments
IC ADC/DAC 1K 64TQFP
TMS320DM6435ZWT6
TMS320DM6435ZWT6
Texas Instruments
IC DGTL MEDIA PROCESSOR 361-BGA
TMS320DM642AGNZ7
TMS320DM642AGNZ7
Texas Instruments
IC FIXED-POINT DSP 548-FCBGA
TMS320F28065UPZPS
TMS320F28065UPZPS
Texas Instruments
IC MCU 32BIT 128KB FLSH 100HTQFP
MAX232IDR
MAX232IDR
Texas Instruments
IC TRANSCEIVER FULL 2/2 16SOIC
TRS208IDWR
TRS208IDWR
Texas Instruments
IC TRANSCEIVER FULL 4/4 24SOIC
SN65HVD1050DRG4
SN65HVD1050DRG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 8SOIC
THS4131CD
THS4131CD
Texas Instruments
IC OPAMP DIFF 1 CIRCUIT 8SOIC
TLC274IPWR
TLC274IPWR
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14TSSOP
LM3401MMX/NOPB
LM3401MMX/NOPB
Texas Instruments
IC LED DRVR CTRLR PWM 1A 8VSSOP
TPS54357PWP
TPS54357PWP
Texas Instruments
IC REG BUCK 5V 3A 16HTSSOP
TPS71719DCKT
TPS71719DCKT
Texas Instruments
IC REG LINEAR 1.9V 150MA SC70-5