CSD18509Q5B
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Texas Instruments CSD18509Q5B

Manufacturer No:
CSD18509Q5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18509Q5B is a high-performance N-Channel MOSFET developed by Texas Instruments, designed for power conversion applications. This component is part of the NexFET™ Power MOSFET series, known for its efficiency and reliability. It is housed in a VSON-CLIP-8 package, making it suitable for surface-mount technology (SMD/SMT). The CSD18509Q5B is optimized to minimize power losses, making it ideal for modern power management systems. Its target users include engineers and designers in industries such as automotive, industrial automation, and consumer electronics.

Key Specifications

ParameterValueUnitNotes
BrandTexas Instruments--
Product TypeMOSFET--
PackageVSON-CLIP-8--
Channel TypeN-Channel--
Vds (Drain-Source Voltage)40V-
Id (Continuous Drain Current)50A-
Rds On (Drain-Source On-Resistance)1.3mOhms-
Vgs (Gate-Source Voltage)20V-
Vgs th (Gate-Source Threshold Voltage)1.4V-
Qg (Gate Charge)150nC-
Operating Temperature Range-55 to +150°C-
Power Dissipation195W-
ConfigurationSingle--
Rise Time19ns-
Fall Time11ns-
Turn-On Delay Time9ns-
Turn-Off Delay Time57ns-

Key Features

  • High efficiency with low Rds On (1.3 mOhms) for reduced power losses.
  • Designed for power conversion applications, ensuring optimal performance.
  • Compact VSON-CLIP-8 package suitable for space-constrained designs.
  • Robust thermal performance with a power dissipation of 195 W.
  • Wide operating temperature range (-55°C to +150°C) for versatile applications.

Applications

The CSD18509Q5B is widely used in power conversion systems, including DC-DC converters, motor drives, and battery management systems. Its high efficiency and reliability make it a preferred choice in automotive electronics, such as electric vehicle power systems. Additionally, it is employed in industrial automation for motor control and in consumer electronics for power management in devices like laptops and smartphones.

Q & A

1. What is the maximum drain-source voltage of the CSD18509Q5B?

The maximum drain-source voltage (Vds) is 40 V.

2. What is the continuous drain current rating of this MOSFET?

The continuous drain current (Id) is 50 A.

3. What is the typical Rds On value for this component?

The typical Rds On value is 1.3 mOhms.

4. What package does the CSD18509Q5B use?

It uses the VSON-CLIP-8 package.

5. What is the gate-source voltage (Vgs) range for this MOSFET?

The gate-source voltage (Vgs) range is up to 20 V.

6. Is the CSD18509Q5B RoHS compliant?

Yes, it is RoHS compliant.

7. What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to +150°C.

8. What is the typical gate charge (Qg) of the CSD18509Q5B?

The typical gate charge (Qg) is 150 nC.

9. Can this MOSFET be used in automotive applications?

Yes, it is suitable for automotive applications, including electric vehicle power systems.

10. What is the power dissipation rating of the CSD18509Q5B?

The power dissipation rating is 195 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18509Q5B CSD18509Q5BT CSD18502Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 26A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 32A, 10V 1.2mOhm @ 32A, 10V 2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V 195 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13900 pF @ 20 V 13900 pF @ 20 V 5070 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc) 3.1W (Ta), 195W (Tc) 3.2W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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