CSD17573Q5B
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Texas Instruments CSD17573Q5B

Manufacturer No:
CSD17573Q5B
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17573Q5B is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET is part of the NexFET™ Power MOSFET series, which is renowned for its efficiency and reliability. The CSD17573Q5B is specifically optimized for high-frequency switching applications, making it an ideal choice for DC-DC converters, motor drives, and load switching in various electronic systems. Its compact package and advanced silicon technology provide excellent thermal performance and low on-resistance, catering to the needs of modern power electronics designers.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30VMaximum
Continuous Drain Current (ID)50Aat TC = 25°C
Pulsed Drain Current (IDM)200APulsed
On-Resistance (RDS(on))3.2at VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum
Power Dissipation (PD)2.5Wat TA = 25°C
Operating Junction Temperature (TJ)-55 to 150°CRange
PackageSON (5x6)-Compact surface-mount

Key Features

  • Low on-resistance (RDS(on)) for reduced conduction losses.
  • Optimized for high-frequency switching applications.
  • Compact SON (5x6) package for space-constrained designs.
  • Excellent thermal performance due to advanced silicon technology.
  • Robust gate oxide for enhanced reliability.

Applications

The CSD17573Q5B is widely used in various power management applications, including:

  • DC-DC Converters: Provides efficient power conversion in step-down or step-up configurations.
  • Motor Drives: Enables precise control of motor speed and direction in automotive and industrial systems.
  • Load Switching: Ideal for switching high currents in portable devices and battery-powered systems.
  • Power Supplies: Enhances efficiency in switch-mode power supplies (SMPS).

Q & A

1. What is the maximum drain-source voltage of the CSD17573Q5B?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 3.2 mΩ at VGS = 10V.

3. Can the CSD17573Q5B handle high-frequency switching?

Yes, it is specifically optimized for high-frequency switching applications.

4. What is the operating temperature range?

The operating junction temperature ranges from -55°C to 150°C.

5. What package does this MOSFET use?

It comes in a compact SON (5x6) surface-mount package.

6. Is the CSD17573Q5B suitable for motor drive applications?

Yes, it is ideal for motor drives in automotive and industrial systems.

7. What is the continuous drain current rating?

The continuous drain current (ID) is 50A at TC = 25°C.

8. Does it support pulsed drain current?

Yes, it can handle pulsed drain currents up to 200A.

9. What are the key advantages of this MOSFET?

Key advantages include low on-resistance, high-frequency switching capability, and excellent thermal performance.

10. Where can I find detailed technical documentation?

Detailed technical documentation is available on the Texas Instruments website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD17573Q5B CSD17573Q5BT CSD17576Q5B CSD17570Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 35A, 10V 1mOhm @ 35A, 10V 2mOhm @ 25A, 10V 0.69mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA 1.8V @ 250µA 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 4.5 V 64 nC @ 4.5 V 68 nC @ 10 V 121 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 15 V 9000 pF @ 15 V 4430 pF @ 15 V 13600 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 3.2W (Ta), 195W (Tc) 3.2W (Ta), 195W (Tc) 3.1W (Ta), 125W (Tc) 3.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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