CSD17573Q5BT
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Texas Instruments CSD17573Q5BT

Manufacturer No:
CSD17573Q5BT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The CSD17573Q5BT is an N-channel MOSFET produced by Texas Instruments, designed for high-efficiency power management applications. This component is part of TI's NexFET™ Power MOSFET series, known for its low on-resistance and high switching performance. The CSD17573Q5BT is ideal for use in power supplies, motor drives, and other applications requiring robust and reliable power switching. Its compact design and advanced technology make it a competitive choice for modern electronic systems.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)73A
On-Resistance (RDS(on))1.7@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)2.5W
PackageSON5x6 mm

Key Features

  • Low on-resistance for reduced conduction losses.
  • High switching speed for efficient power management.
  • Compact SON package for space-constrained designs.
  • Robust thermal performance for reliable operation.
  • Designed for use in a wide range of applications, including DC-DC converters and motor drives.

Applications

The CSD17573Q5BT is widely used in various applications, including:

  • Power Supplies: Efficiently manages power in DC-DC converters and voltage regulators.
  • Motor Drives: Provides reliable switching in motor control circuits.
  • Automotive Electronics: Suitable for use in automotive power systems due to its robustness.
  • Industrial Automation: Enhances performance in industrial control systems.

Q & A

1. What is the maximum drain-source voltage for CSD17573Q5BT?

The maximum drain-source voltage (VDS) is 30V.

2. What is the continuous drain current rating?

The continuous drain current (ID) is 73A.

3. What is the typical on-resistance?

The typical on-resistance (RDS(on)) is 1.7mΩ at VGS = 10V.

4. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±20V.

5. What package does CSD17573Q5BT use?

It uses a SON package with dimensions of 5x6 mm.

6. What is the power dissipation rating?

The power dissipation (PD) is 2.5W.

7. Is this MOSFET suitable for automotive applications?

Yes, its robust design makes it suitable for automotive power systems.

8. What are the key advantages of CSD17573Q5BT?

Its low on-resistance, high switching speed, and compact package are key advantages.

9. Can it be used in industrial automation?

Yes, it is well-suited for industrial control systems.

10. What is the operating temperature range?

The operating temperature range is typically -55°C to 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD17573Q5BT CSD17576Q5BT CSD17570Q5BT CSD17573Q5B
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 35A, 10V 2mOhm @ 25A, 10V 0.69mOhm @ 50A, 10V 1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA 1.9V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 4.5 V 32 nC @ 4.5 V 121 nC @ 4.5 V 64 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 15 V 4430 pF @ 15 V 13600 pF @ 15 V 9000 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 3.2W (Ta), 195W (Tc) 3.1W (Ta), 125W (Tc) 3.2W (Ta) 3.2W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6) 8-VSONP (5x6) 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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