Overview
The CSD16323Q3 is a 25-V, 3.8-mΩ N-Channel NexFET™ power MOSFET designed by Texas Instruments. This device is optimized for 5-V gate drive applications and is particularly suited for minimizing losses in power conversion. It features a compact SON 3.3-mm × 3.3-mm plastic package, making it ideal for space-constrained designs. The MOSFET is lead-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS (Drain-to-Source Voltage) | VGS = 0 V, ID = 250 μA | 25 | V |
| VGS (Gate-to-Source Voltage) | +10 / –8 | - | V |
| ID (Continuous Drain Current, Package Limit) | - | 60 | A |
| ID (Continuous Drain Current, Silicon Limited, TC = 25°C) | - | 105 | A |
| IDM (Pulsed Drain Current) | - | 240 | A |
| PD (Power Dissipation, TC = 25°C) | - | 2.8 | W |
| TJ, Tstg (Operating Junction, Storage Temperature) | - | –55 to 150 | °C |
| RDS(on) (Drain-to-Source On Resistance) | VGS = 3 V, ID = 24 A | 5.4 | mΩ |
| RDS(on) (Drain-to-Source On Resistance) | VGS = 4.5 V, ID = 24 A | 4.4 | mΩ |
| RDS(on) (Drain-to-Source On Resistance) | VGS = 8 V, ID = 24 A | 3.8 | mΩ |
| Vth (Threshold Voltage) | VDS = VGS, ID = 250 μA | 1.1 | V |
| Qg (Gate Charge Total, 4.5 V) | VDS = 12.5 V, ID = 24 A | 6.2 | nC |
| Qgd (Gate Charge Gate-to-Drain) | - | 1.1 | nC |
Key Features
- Optimized for 5-V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant and Halogen Free
- Compact SON 3.3-mm × 3.3-mm Plastic Package
Applications
- Point-of-Load Synchronous Buck Converter for applications in Networking, Telecom, and Computing Systems
- Optimized for Control or Synchronous FET Applications
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD16323Q3?
The maximum drain-to-source voltage (VDS) is 25 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 4.5 V and ID = 24 A?
The typical on-state resistance (RDS(on)) is 4.4 mΩ.
- What is the gate charge total (Qg) at VGS = 4.5 V?
The gate charge total (Qg) is 6.2 nC.
- What is the operating junction temperature range for the CSD16323Q3?
The operating junction temperature range is –55 to 150°C.
- Is the CSD16323Q3 RoHS compliant and halogen-free?
- What is the package type of the CSD16323Q3?
The package type is SON 3.3-mm × 3.3-mm plastic package.
- What are the typical applications of the CSD16323Q3?
The typical applications include point-of-load synchronous buck converters in networking, telecom, and computing systems, as well as control or synchronous FET applications.
- What is the maximum continuous drain current (ID) for the CSD16323Q3?
The maximum continuous drain current (ID) is 60 A (package limit) and 105 A (silicon limited at TC = 25°C).
- What is the threshold voltage (Vth) of the CSD16323Q3?
The threshold voltage (Vth) is typically 1.1 V.
- What is the gate-to-drain charge (Qgd) of the CSD16323Q3?
The gate-to-drain charge (Qgd) is 1.1 nC.
