CSD16323Q3
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Texas Instruments CSD16323Q3

Manufacturer No:
CSD16323Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 21A/60A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD16323Q3 is a 25-V, 3.8-mΩ N-Channel NexFET™ power MOSFET produced by Texas Instruments. Although this device is now obsolete and no longer in production, it was designed to minimize losses in power conversion and is optimized for 5-V gate drive applications. The MOSFET features a compact SON 3.3-mm × 3.3-mm plastic package, making it suitable for high-density power management solutions. It is RoHS compliant, halogen-free, and has lead-free terminal plating, aligning with modern environmental standards.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 25 V
VGS - Gate-to-Source Voltage +10 / –8 V
ID - Continuous Drain Current (Package Limit) 60 A
ID - Continuous Drain Current (Silicon Limited), TC = 25°C 105 A
IDM - Pulsed Drain Current 240 A
PD - Power Dissipation, TC = 25°C 2.8 W
RDS(on) - Drain-to-Source On Resistance (VGS = 4.5 V, ID = 24 A) 4.4
Vth - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 V
Qg - Gate Charge Total (4.5 V) VDS = 12.5 V, ID = 24 A 6.2 nC
Qgd - Gate Charge Gate-to-Drain 1.1 nC
TJ - Operating Junction Temperature -55 to 150 °C

Key Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant and Halogen Free
  • Compact SON 3.3-mm × 3.3-mm Plastic Package

Applications

  • Point-of-Load Synchronous Buck Converter for applications in Networking, Telecom, and Computing Systems
  • Optimized for Control or Synchronous FET Applications

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD16323Q3?

    The maximum drain-to-source voltage (VDS) is 25 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 4.5 V and ID = 24 A?

    The typical on-state resistance (RDS(on)) is 4.4 mΩ.

  3. What is the gate charge total (Qg) at VGS = 4.5 V and ID = 24 A?

    The gate charge total (Qg) is 6.2 nC.

  4. What are the operating junction and storage temperatures for the CSD16323Q3?

    The operating junction and storage temperatures range from -55°C to 150°C.

  5. Is the CSD16323Q3 RoHS compliant and halogen-free?
  6. What is the package type of the CSD16323Q3?

    The package type is a compact SON 3.3-mm × 3.3-mm plastic package.

  7. What are the typical applications of the CSD16323Q3?

    The CSD16323Q3 is typically used in point-of-load synchronous buck converters for networking, telecom, and computing systems, as well as in control or synchronous FET applications.

  8. What is the maximum pulsed drain current (IDM) for the CSD16323Q3?

    The maximum pulsed drain current (IDM) is 240 A.

  9. Is the CSD16323Q3 still in production?

    No, the CSD16323Q3 is obsolete and no longer in production.

  10. What is the threshold voltage (Vth) of the CSD16323Q3?

    The threshold voltage (Vth) is typically 1.1 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 24A, 8V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD16323Q3 CSD16327Q3 CSD16323Q3C
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 60A (Tc) 60A (Tc) 21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 3V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 24A, 8V 4mOhm @ 24A, 8V 4.5mOhm @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 4.5 V 8.4 nC @ 4.5 V 8.4 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 12.5 V 1300 pF @ 12.5 V 1300 pF @ 12.5 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta) 3W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3) 8-SON-EP (3x3)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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