CSD16323Q3
  • Share:

Texas Instruments CSD16323Q3

Manufacturer No:
CSD16323Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 21A/60A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD16323Q3 is a 25-V, 3.8-mΩ N-Channel NexFET™ power MOSFET produced by Texas Instruments. Although this device is now obsolete and no longer in production, it was designed to minimize losses in power conversion and is optimized for 5-V gate drive applications. The MOSFET features a compact SON 3.3-mm × 3.3-mm plastic package, making it suitable for high-density power management solutions. It is RoHS compliant, halogen-free, and has lead-free terminal plating, aligning with modern environmental standards.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 25 V
VGS - Gate-to-Source Voltage +10 / –8 V
ID - Continuous Drain Current (Package Limit) 60 A
ID - Continuous Drain Current (Silicon Limited), TC = 25°C 105 A
IDM - Pulsed Drain Current 240 A
PD - Power Dissipation, TC = 25°C 2.8 W
RDS(on) - Drain-to-Source On Resistance (VGS = 4.5 V, ID = 24 A) 4.4
Vth - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 V
Qg - Gate Charge Total (4.5 V) VDS = 12.5 V, ID = 24 A 6.2 nC
Qgd - Gate Charge Gate-to-Drain 1.1 nC
TJ - Operating Junction Temperature -55 to 150 °C

Key Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant and Halogen Free
  • Compact SON 3.3-mm × 3.3-mm Plastic Package

Applications

  • Point-of-Load Synchronous Buck Converter for applications in Networking, Telecom, and Computing Systems
  • Optimized for Control or Synchronous FET Applications

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD16323Q3?

    The maximum drain-to-source voltage (VDS) is 25 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 4.5 V and ID = 24 A?

    The typical on-state resistance (RDS(on)) is 4.4 mΩ.

  3. What is the gate charge total (Qg) at VGS = 4.5 V and ID = 24 A?

    The gate charge total (Qg) is 6.2 nC.

  4. What are the operating junction and storage temperatures for the CSD16323Q3?

    The operating junction and storage temperatures range from -55°C to 150°C.

  5. Is the CSD16323Q3 RoHS compliant and halogen-free?
  6. What is the package type of the CSD16323Q3?

    The package type is a compact SON 3.3-mm × 3.3-mm plastic package.

  7. What are the typical applications of the CSD16323Q3?

    The CSD16323Q3 is typically used in point-of-load synchronous buck converters for networking, telecom, and computing systems, as well as in control or synchronous FET applications.

  8. What is the maximum pulsed drain current (IDM) for the CSD16323Q3?

    The maximum pulsed drain current (IDM) is 240 A.

  9. Is the CSD16323Q3 still in production?

    No, the CSD16323Q3 is obsolete and no longer in production.

  10. What is the threshold voltage (Vth) of the CSD16323Q3?

    The threshold voltage (Vth) is typically 1.1 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 24A, 8V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.28
730

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD16323Q3 CSD16327Q3 CSD16323Q3C
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 60A (Tc) 60A (Tc) 21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 3V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 24A, 8V 4mOhm @ 24A, 8V 4.5mOhm @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 4.5 V 8.4 nC @ 4.5 V 8.4 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 12.5 V 1300 pF @ 12.5 V 1300 pF @ 12.5 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta) 3W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3) 8-SON-EP (3x3)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220

Related Product By Brand

DAC7644E/1KG4
DAC7644E/1KG4
Texas Instruments
IC DAC 16BIT V-OUT 48SSOP
MSP430G2332IPW14R
MSP430G2332IPW14R
Texas Instruments
IC MCU 16BIT 4KB FLASH 14TSSOP
CD74HC4051QM96Q1
CD74HC4051QM96Q1
Texas Instruments
IC MUX/DEMUX 8X1 16-SOIC
MAX3232EIDBE4
MAX3232EIDBE4
Texas Instruments
IC TRANSCEIVER FULL 2/2 16SSOP
TLV2711IDBVR
TLV2711IDBVR
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
TL082IDG4
TL082IDG4
Texas Instruments
IC OPAMP JFET 2 CIRCUIT 8SOIC
TL3016ID
TL3016ID
Texas Instruments
IC HS LP COMP 8-SOIC
SN74HC74DT
SN74HC74DT
Texas Instruments
IC FF D-TYPE DUAL 1BIT 14SOIC
SN74HC574ANSR
SN74HC574ANSR
Texas Instruments
IC FF D-TYPE SNGL 8BIT 16SO
CD4056BME4
CD4056BME4
Texas Instruments
IC DRVR 7 SEGMENT 1 DIGIT 16SOIC
UCC27424QDGNRQ1
UCC27424QDGNRQ1
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
LP2985AITL-3.3/NOPB
LP2985AITL-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 150MA 5DSBGA