STW65N65DM2AG
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STMicroelectronics STW65N65DM2AG

Manufacturer No:
STW65N65DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 60A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW65N65DM2AG is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, known for its advanced performance and reliability. This MOSFET is designed to offer very low recovery charge (Qrr) and recovery time (trr), making it suitable for high-efficiency applications. It is particularly useful in automotive and industrial environments where high voltage and current handling are required.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)38 A
Pulse Drain Current (Idm)240 A
Power Dissipation (Pd)446 W
Package TypeTO247
Recovery Charge (Qrr)Very Low
Recovery Time (trr)Very Low

Key Features

  • High voltage rating of 650 V, making it suitable for high-voltage applications.
  • Continuous drain current of 38 A and pulse drain current of 240 A, ensuring high current handling capability.
  • Very low recovery charge (Qrr) and recovery time (trr), enhancing efficiency and reducing switching losses.
  • MDmesh™ DM2 technology for improved performance and reliability.
  • Automotive-grade, ensuring compliance with stringent automotive standards.

Applications

  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and converters.
  • High-efficiency switching applications such as DC-DC converters and motor drives.
  • Power factor correction (PFC) circuits.
  • Other high-voltage and high-current applications requiring low switching losses.

Q & A

  1. What is the voltage rating of the STW65N65DM2AG MOSFET?
    The voltage rating of the STW65N65DM2AG MOSFET is 650 V.
  2. What is the continuous drain current of the STW65N65DM2AG?
    The continuous drain current is 38 A.
  3. What is the pulse drain current of the STW65N65DM2AG?
    The pulse drain current is 240 A.
  4. What is the power dissipation of the STW65N65DM2AG?
    The power dissipation is 446 W.
  5. What package type is the STW65N65DM2AG available in?
    The STW65N65DM2AG is available in the TO247 package type.
  6. What are the key benefits of the MDmesh™ DM2 technology in the STW65N65DM2AG?
    The MDmesh™ DM2 technology offers very low recovery charge (Qrr) and recovery time (trr), enhancing efficiency and reducing switching losses.
  7. Is the STW65N65DM2AG suitable for automotive applications?
    Yes, the STW65N65DM2AG is automotive-grade and suitable for automotive applications.
  8. What are some common applications of the STW65N65DM2AG?
    Common applications include automotive systems, industrial power supplies, high-efficiency switching applications, and power factor correction (PFC) circuits.
  9. How does the STW65N65DM2AG improve efficiency in switching applications?
    The STW65N65DM2AG improves efficiency by offering very low recovery charge and recovery time, reducing switching losses.
  10. Where can I find detailed specifications and datasheets for the STW65N65DM2AG?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as on distributor websites such as Digi-Key and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW65N65DM2AG STWA65N65DM2AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V 50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 100 V 5500 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 446W (Tc) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247 Long Leads
Package / Case TO-247-3 TO-247-3

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