Overview
The STW55NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II family, utilizing the second generation of MDmesh™ technology. It features a new strip-layout vertical structure, which results in extremely low on-resistance and superior switching performance. The STW55NM60ND is particularly suited for applications requiring high efficiency and reliability, such as bridge topologies and Zero Voltage Switching (ZVS) phase-shift converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (Vds) | 600 | V |
| Maximum Gate-Source Voltage (Vgs) | 25 | V |
| Maximum Drain Current (Id) | 51 | A |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 0.047 (typ.) / 0.06 (max.) | Ω |
| Total Gate Charge (Qg) | 190 | nC |
| Rise Time (tr) | 68 | nS |
| Output Capacitance (Coss) | 300 | pF |
| Package | TO-247 | |
| Maximum Power Dissipation (Pd) | 350 | W |
Key Features
- The worldwide best Rds(on) amongst the fast recovery diode devices in TO-247 package.
- 100% avalanche tested for robustness and reliability.
- Low input capacitance and gate charge, reducing switching losses.
- Low gate input resistance for better control.
- High dv/dt and avalanche capabilities, ensuring high performance under demanding conditions.
Applications
The STW55NM60ND is ideal for various high-power applications, including:
- Bridge topologies.
- Zero Voltage Switching (ZVS) phase-shift converters.
- Switch Mode Power Supplies (SMPS).
- Data centers.
- Solar microinverters.
Q & A
- What is the maximum drain-source voltage of the STW55NM60ND?
The maximum drain-source voltage (Vds) is 600 V.
- What is the typical on-resistance of the STW55NM60ND?
The typical on-resistance (Rds(on)) is 0.047 Ω, with a maximum of 0.06 Ω.
- What is the maximum drain current of the STW55NM60ND?
The maximum drain current (Id) is 51 A.
- What package type is the STW55NM60ND available in?
The STW55NM60ND is available in the TO-247 package.
- What are the key features of the STW55NM60ND?
The key features include the worldwide best Rds(on) amongst fast recovery diode devices, 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and high dv/dt and avalanche capabilities.
- What applications is the STW55NM60ND suited for?
The STW55NM60ND is suited for bridge topologies, ZVS phase-shift converters, SMPS, data centers, and solar microinverters.
- What is the maximum junction temperature of the STW55NM60ND?
The maximum junction temperature (Tj) is 150 °C.
- Is the STW55NM60ND RoHS compliant?
Yes, the STW55NM60ND is RoHS compliant.[
- What is the total gate charge of the STW55NM60ND?
The total gate charge (Qg) is 190 nC.[
- What is the rise time of the STW55NM60ND?
The rise time (tr) is 68 nS.[
