STW43NM60ND
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STMicroelectronics STW43NM60ND

Manufacturer No:
STW43NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 35A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW43NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It belongs to the FDmesh™ II series, which is the second generation of MDmesh™ technology. This MOSFET is designed to offer superior performance in high-power applications, particularly in areas requiring high efficiency and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)35 A
Package TypeTO-247-3
On-Resistance (Rds(on))Low on-resistance
Gate Charge (Qg)Extremely low gate charge
Input Capacitance (Ciss)Low input capacitance
Avalanche Testing100% avalanche tested
Body DiodeFast-recovery body diode

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • High current rating of 35 A, enabling it to handle substantial current loads.
  • Low on-resistance (Rds(on)) for reduced power losses.
  • Extremely low gate charge and input capacitance, which enhances switching performance.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Fast-recovery body diode, which helps in reducing switching losses.

Applications

The STW43NM60ND is ideal for various high-power applications, including:

  • Flyback converters: Due to its high voltage and current ratings, it is well-suited for flyback converter designs.
  • LED lighting: Its efficiency and reliability make it a good choice for LED lighting systems.
  • Power supplies: It can be used in high-power supply units where efficiency and robustness are critical.
  • Motor control: Suitable for motor control applications requiring high power handling and efficiency.

Q & A

  1. What is the voltage rating of the STW43NM60ND MOSFET?
    The voltage rating of the STW43NM60ND MOSFET is 600 V.
  2. What is the current rating of the STW43NM60ND MOSFET?
    The current rating of the STW43NM60ND MOSFET is 35 A.
  3. What package type does the STW43NM60ND MOSFET use?
    The STW43NM60ND MOSFET uses the TO-247-3 package type.
  4. Is the STW43NM60ND MOSFET 100% avalanche tested?
    Yes, the STW43NM60ND MOSFET is 100% avalanche tested.
  5. What are the key features of the STW43NM60ND MOSFET?
    The key features include low on-resistance, extremely low gate charge, low input capacitance, and a fast-recovery body diode.
  6. What are some typical applications of the STW43NM60ND MOSFET?
    Typical applications include flyback converters, LED lighting, power supplies, and motor control.
  7. Is the STW43NM60ND MOSFET still in production?
    No, the STW43NM60ND MOSFET is no longer manufactured and is considered obsolete.
  8. What technology does the STW43NM60ND MOSFET use?
    The STW43NM60ND MOSFET uses the FDmesh™ II series technology, which is the second generation of MDmesh™ technology.
  9. Where can I find detailed specifications for the STW43NM60ND MOSFET?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser and Digi-Key.
  10. What are the benefits of using the STW43NM60ND MOSFET in high-power applications?
    The benefits include high efficiency, low power losses, robustness against transient conditions, and fast switching performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):255W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW43NM60ND STW47NM60ND STW23NM60ND STW43NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc) 19.5A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17.5A, 10V 88mOhm @ 17.5A, 10V 180mOhm @ 10A, 10V 88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 120 nC @ 10 V 70 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 50 V 4200 pF @ 50 V 2050 pF @ 50 V 4200 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 255W (Tc) 255W (Tc) 150W (Tc) 255W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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