Overview
The STW36N60M6 is a high-performance N-channel power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh™ M6 technology. This device is part of the renowned MDmesh family, which has been enhanced with the latest advancements in silicon technology. The STW36N60M6 is designed to offer superior efficiency, reliability, and switching characteristics, making it an ideal choice for a wide range of power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STW36N60M6 | |
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 85 mΩ (typ.), 99 mΩ (max.) | mΩ |
| ID (Maximum Drain Current) | 30 A | A |
| VGS (Maximum Gate-Source Voltage) | ±25 | V |
| Tj (Maximum Junction Temperature) | 150 °C | °C |
| Pd (Maximum Power Dissipation) | 208 W | W |
| Package | TO-247 |
Key Features
- Reduced switching losses due to advanced MDmesh™ M6 technology.
- Lower RDS(on) * area compared to previous generations, enhancing efficiency.
- Low gate input resistance for better control and reduced power consumption.
- 100% avalanche tested to ensure robustness and reliability.
- Zener-protected gate for enhanced protection against voltage spikes.
Applications
The STW36N60M6 is suitable for various high-power switching applications, including:
- Power supplies and converters.
- Motor control and drive systems.
- Industrial automation and control systems.
- High-frequency switching circuits.
Q & A
- What is the maximum drain-source voltage of the STW36N60M6?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STW36N60M6?
The typical on-resistance (RDS(on)) is 85 mΩ.
- What is the maximum drain current (ID) of the STW36N60M6?
The maximum drain current (ID) is 30 A.
- What is the maximum gate-source voltage (VGS) of the STW36N60M6?
The maximum gate-source voltage (VGS) is ±25 V.
- What is the package type of the STW36N60M6?
The package type is TO-247.
- What are the key features of the MDmesh™ M6 technology used in the STW36N60M6?
The key features include reduced switching losses, lower RDS(on) * area, low gate input resistance, and 100% avalanche testing.
- Is the STW36N60M6 RoHS compliant?
- What is the maximum junction temperature (Tj) of the STW36N60M6?
The maximum junction temperature (Tj) is 150 °C.
- What is the maximum power dissipation (Pd) of the STW36N60M6?
The maximum power dissipation (Pd) is 208 W.
- What are some common applications for the STW36N60M6?
