Overview
The STP36N60M6 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the advanced MDmesh™ M6 technology. This device is part of the well-established MDmesh family of Super Junction (SJ) MOSFETs, known for their excellent electrical characteristics and robust performance. The STP36N60M6 is designed to offer reduced switching losses, lower RDS(on) per area compared to previous generations, and enhanced switching behavior, making it ideal for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Drain Current (ID) | 30 | A |
| Pulsed Drain Current (IDM) | 102 | A |
| Static Drain-Source On-Resistance (RDS(on)) | 99 | mΩ |
| Gate-Source Voltage (VGS) | ±25 | V |
| Total Power Dissipation (PTOT) at TC = 25 °C | 230 | W |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 | °C/W |
| Gate Charge (Qg) | 44.3 | nC |
| Package Type | TO-220, TO-247 |
Key Features
- Reduced switching losses
- Lower RDS(on) per area compared to previous generations
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Excellent switching performance and user-friendly experience for maximum end-application efficiency
Applications
The STP36N60M6 is suitable for a variety of high-power switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- Industrial automation
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STP36N60M6?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) rating of the STP36N60M6 at 25 °C?
The continuous drain current (ID) rating is 30 A at 25 °C.
- What is the typical on-state resistance (RDS(on)) of the STP36N60M6?
The typical on-state resistance (RDS(on)) is 99 mΩ.
- What are the package options available for the STP36N60M6?
The STP36N60M6 is available in TO-220 and TO-247 packages.
- What is the gate-source voltage (VGS) range for the STP36N60M6?
The gate-source voltage (VGS) range is ±25 V.
- Is the STP36N60M6 100% avalanche tested?
- What is the total gate charge (Qg) of the STP36N60M6?
The total gate charge (Qg) is 44.3 nC.
- What is the thermal resistance, junction-to-case (RthJC), of the STP36N60M6?
The thermal resistance, junction-to-case (RthJC), is 0.54 °C/W.
- What are some common applications for the STP36N60M6?
- Does the STP36N60M6 have Zener protection?
