STT6N3LLH6
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STMicroelectronics STT6N3LLH6

Manufacturer No:
STT6N3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 6A SOT23-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STT6N3LLH6 is an N-channel Power MOSFET developed by STMicroelectronics using the 6th generation of STripFET™ DeepGATE™ technology. This device features a new gate structure that enhances its performance and efficiency. It is packaged in a SOT-23-6L format, making it suitable for a variety of applications where space is limited.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 6 A (at Tc)
RDS(on) (On-Resistance) 0.021 Ω (at VGS = 10 V, ID = 3 A)
PD (Power Dissipation) 1.6 W (at Tc)
IDM (Peak Drain Current) 24 A
Package SOT-23-6L

Key Features

  • High efficiency due to low on-resistance (RDS(on)) of 0.021 Ω at VGS = 10 V, ID = 3 A.
  • Enhanced gate structure using 6th generation STripFET™ DeepGATE™ technology.
  • Compact SOT-23-6L package suitable for space-constrained applications.
  • High peak drain current (IDM) of 24 A.
  • RoHS compliant.

Applications

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power management in consumer and industrial electronics.
  • Automotive systems requiring high reliability and efficiency.
  • General-purpose switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STT6N3LLH6?

    30 V.

  2. What is the continuous drain current (ID) of the STT6N3LLH6 at Tc?

    6 A.

  3. What is the on-resistance (RDS(on)) of the STT6N3LLH6 at VGS = 10 V, ID = 3 A?

    0.021 Ω.

  4. What is the power dissipation (PD) of the STT6N3LLH6 at Tc?

    1.6 W.

  5. What is the peak drain current (IDM) of the STT6N3LLH6?

    24 A.

  6. What package type is the STT6N3LLH6 available in?

    SOT-23-6L.

  7. Is the STT6N3LLH6 RoHS compliant?

    Yes.

  8. What technology is used in the STT6N3LLH6?

    6th generation STripFET™ DeepGATE™ technology.

  9. What are some common applications of the STT6N3LLH6?

    DC-DC converters, motor control, power management in consumer and industrial electronics, automotive systems, and general-purpose switching applications.

  10. Where can I find detailed specifications for the STT6N3LLH6?

    You can find detailed specifications on the official STMicroelectronics website, as well as on distributor websites such as Digi-Key, Mouser, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:283 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):1.6W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-6
Package / Case:SOT-23-6
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In Stock

$0.78
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