Overview
The STT4P3LLH6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET H6 technology with a new trench gate structure. This device is designed to offer very low on-resistance (RDS(on)) and is packaged in an SOT23-6L package. The STT4P3LLH6 is suitable for a variety of switching applications due to its high performance and robust characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STT4P3LLH6 | |
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at 25°C | 4 | A |
| Continuous Drain Current (ID) at 100°C | 2.5 | A |
| Pulsed Drain Current (IDM) | 16 | A |
| Total Power Dissipation at 25°C | 1.6 | W |
| Thermal Resistance, Junction-to-Ambient | 78 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V | 0.056 | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Input Capacitance (Ciss) | 639 | pF |
| Output Capacitance (Coss) | 79 | pF |
| Reverse Transfer Capacitance (Crss) | 52 | pF |
| Total Gate Charge (Qg) | 6 | nC |
Key Features
- Very Low On-Resistance (RDS(on)): The STT4P3LLH6 exhibits a very low RDS(on) of 0.056 Ω at VGS = 10 V, making it highly efficient for switching applications.
- Very Low Gate Charge: This MOSFET has a low gate charge, which reduces the power required to drive the gate, thereby enhancing overall system efficiency.
- High Avalanche Ruggedness: The device is designed to withstand high avalanche energies, ensuring robust performance under stressful conditions.
- Low Gate Drive Power Loss: The low gate charge and efficient gate drive characteristics minimize power loss, making the device suitable for high-frequency switching applications.
Applications
The STT4P3LLH6 is primarily used in switching applications due to its high performance, low on-resistance, and robust avalanche ruggedness. These applications include but are not limited to:
- Power management systems
- DC-DC converters
- Motor control circuits
- High-frequency switching circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STT4P3LLH6?
The maximum drain-source voltage (VDS) is 30 V.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 4 A.
- What is the typical on-resistance (RDS(on)) of the STT4P3LLH6?
The typical on-resistance (RDS(on)) is 0.048 Ω at VGS = 10 V.
- What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is ±20 V.
- What is the thermal resistance, junction-to-ambient (RthJA), of the STT4P3LLH6?
The thermal resistance, junction-to-ambient (RthJA), is 78 °C/W.
- What are the key features of the STT4P3LLH6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what package is the STT4P3LLH6 available?
The STT4P3LLH6 is available in an SOT23-6L package.
- What are the typical applications of the STT4P3LLH6?
The typical applications include switching applications such as power management systems, DC-DC converters, motor control circuits, and high-frequency switching circuits.
- What is the maximum junction temperature (Tj) of the STT4P3LLH6?
The maximum junction temperature (Tj) is 150 °C.
- What is the total power dissipation at 25°C for the STT4P3LLH6?
The total power dissipation at 25°C is 1.6 W.
