Overview
The STS7PF30L is a P-channel Power MOSFET developed by STMicroelectronics using their unique STripFET™ II process. This transistor is designed to minimize input capacitance and gate charge, making it ideal for high-efficiency applications. It features a low on-resistance and rugged avalanche characteristics, ensuring high performance and reliability. The device is packaged in a standard SO-8 outline, facilitating easy automated surface mount assembly.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (continuous) at Tamb = 25 °C (ID) | 7 | A |
| Drain current (continuous) at Tamb = 100 °C (ID) | 4.4 | A |
| Pulsed drain current (IDM) | 28 | A |
| Total dissipation at Tamb = 25 °C (PTOT) | 2.5 | W |
| Static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 3.5 A | 0.011 - 0.016 - 0.021 | Ω |
| Gate threshold voltage (VGS(th)) | 1 - 1.6 - 2.5 | V |
| Input capacitance (Ciss) at VDS = 25 V, f = 1 MHz, VGS = 0 V | 2600 | pF |
| Total gate charge (Qg) at VDD = 15 V, ID = 7 A, VGS = 4.5 V | 28 - 38 | nC |
Key Features
- Standard SO-8 package for easy automated surface mount assembly
- Low threshold drive requirements
- High packing density for low on-resistance
- Rugged avalanche characteristics
- Less critical alignment steps for improved manufacturing reproducibility
Applications
- Switching applications, particularly in advanced high-efficiency isolated DC-DC converters
- Telecom and computer applications requiring low gate charge drive
- Any application with low gate charge drive requirements
Q & A
- What is the maximum drain-source voltage (VDS) of the STS7PF30L?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-resistance (RDS(on)) of the STS7PF30L at VGS = 10 V and ID = 3.5 A?
The typical on-resistance (RDS(on)) is 0.016 Ω.
- What is the maximum continuous drain current (ID) at Tamb = 25 °C?
The maximum continuous drain current (ID) at Tamb = 25 °C is 7 A.
- What is the total gate charge (Qg) at VDD = 15 V, ID = 7 A, and VGS = 4.5 V?
The total gate charge (Qg) is between 28 nC and 38 nC.
- What are the key features of the STS7PF30L's packaging?
The device is packaged in a standard SO-8 outline, facilitating easy automated surface mount assembly.
- What are the typical applications of the STS7PF30L?
Typical applications include switching applications, particularly in advanced high-efficiency isolated DC-DC converters for telecom and computer applications.
- What is the gate threshold voltage (VGS(th)) range of the STS7PF30L?
The gate threshold voltage (VGS(th)) range is between 1 V and 2.5 V.
- What is the input capacitance (Ciss) of the STS7PF30L at VDS = 25 V and f = 1 MHz?
The input capacitance (Ciss) is approximately 2600 pF.
- What is the thermal resistance junction-ambient (Rthj-amb) of the STS7PF30L when mounted on a 1 inch² FR-4 board?
The thermal resistance junction-ambient (Rthj-amb) is 50 °C/W.
- What is the reverse recovery time (trr) of the STS7PF30L's source-drain diode?
The reverse recovery time (trr) is approximately 40 ns.
