STS5N15F4
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STMicroelectronics STS5N15F4

Manufacturer No:
STS5N15F4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 5A 8SO
Delivery:
Payment:
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Product Introduction

Overview

The STS5N15F4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET(TM) DeepGATE(TM) technology family, which is designed to minimize on-state resistance and enhance switching performance. This MOSFET is particularly suited for applications requiring low on-resistance and high current handling capabilities.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 150 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 5 A
On-State Resistance (Rds(on)) 0.057 Ω
Package Type SO-8

Key Features

  • Low On-State Resistance: The STS5N15F4 features a very low on-state resistance of 0.057 Ω, which reduces power losses and improves overall efficiency.
  • High Current Handling: It can handle a continuous drain current of 5 A, making it suitable for high-power applications.
  • Enhanced Switching Performance: The DeepGATE(TM) technology ensures superior switching performances, which is crucial for applications requiring fast and reliable switching.
  • Low Gate Charge: The MOSFET has a low gate charge, which helps in reducing the switching losses and improving the overall system efficiency.

Applications

  • Power Supplies: Suitable for use in power supply units due to its high current handling and low on-state resistance.
  • Motor Control: Ideal for motor control applications where high efficiency and fast switching are required.
  • Automotive Systems: Can be used in various automotive systems such as battery management, power steering, and other high-power applications.
  • Industrial Automation: Applicable in industrial automation systems where reliable and efficient power management is essential.

Q & A

  1. What is the maximum drain-source voltage of the STS5N15F4?

    The maximum drain-source voltage (VDS) is 150 V.

  2. What is the continuous drain current rating of the STS5N15F4 at 25 °C?

    The continuous drain current (ID) at 25 °C is 5 A.

  3. What is the on-state resistance (Rds(on)) of the STS5N15F4?

    The on-state resistance (Rds(on)) is 0.057 Ω.

  4. What package type is the STS5N15F4 available in?

    The STS5N15F4 is available in an SO-8 package.

  5. What technology does the STS5N15F4 use?

    The STS5N15F4 uses STripFET(TM) DeepGATE(TM) technology.

  6. What are the key benefits of the DeepGATE(TM) technology?

    The DeepGATE(TM) technology minimizes on-state resistance and enhances switching performance.

  7. Is the STS5N15F4 suitable for high-power applications?

    Yes, it is suitable for high-power applications due to its high current handling and low on-state resistance.

  8. Can the STS5N15F4 be used in automotive systems?

    Yes, it can be used in various automotive systems such as battery management and power steering.

  9. What are some common applications of the STS5N15F4?

    Common applications include power supplies, motor control, automotive systems, and industrial automation.

  10. What is the gate-source voltage range for the STS5N15F4?

    The gate-source voltage (VGS) range is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:63mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2710 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS5N15F4 STS5N15F3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 2.5A, 10V 57mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2710 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Tc) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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