Overview
The STS10P4LLF6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET F6 technology. This device features a new trench gate structure, which significantly enhances its performance. The STS10P4LLF6 is characterized by its very low on-resistance, low gate charge, and high avalanche ruggedness, making it suitable for a variety of high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | -40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at Tamb = 25 °C | -10 | A |
| Continuous Drain Current (ID) at Tamb = 100 °C | -5.6 | A |
| Pulsed Drain Current (IDM) | -40 | A |
| Total Power Dissipation at Tamb = 25 °C | 2.7 | W |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Operating Junction Temperature (TJ) | 150 | °C |
| On-Resistance (RDS(on)) | 12.5 mΩ (typ.) | mΩ |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 47 °C/W | °C/W |
Key Features
- Very low on-resistance (RDS(on) = 12.5 mΩ typ.)
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- New trench gate structure using STripFET F6 technology
Applications
The STS10P4LLF6 is primarily used in switching applications due to its high performance and reliability. These applications include but are not limited to:
- Power management systems
- DC-DC converters
- Motor control systems
- Automotive electronics
- Industrial power supplies
Q & A
- What is the drain-source voltage rating of the STS10P4LLF6?
The drain-source voltage (VDS) rating is -40 V.
- What is the typical on-resistance (RDS(on)) of the STS10P4LLF6?
The typical on-resistance (RDS(on)) is 12.5 mΩ.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is -10 A.
- What is the thermal resistance, junction-to-ambient (RthJA), of the STS10P4LLF6?
The thermal resistance, junction-to-ambient (RthJA), is 47 °C/W.
- What technology is used in the STS10P4LLF6?
The STS10P4LLF6 uses the STripFET F6 technology with a new trench gate structure.
- What are the key features of the STS10P4LLF6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what package is the STS10P4LLF6 available?
The STS10P4LLF6 is available in an SO-8 package.
- What are the typical applications of the STS10P4LLF6?
The typical applications include switching applications, power management systems, DC-DC converters, motor control systems, and automotive electronics.
- What is the storage temperature range for the STS10P4LLF6?
The storage temperature range is -55 to 150 °C.
- What is the operating junction temperature of the STS10P4LLF6?
The operating junction temperature (TJ) is 150 °C.
