Overview
The STP8NK100Z is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized for high-performance applications, leveraging ST's advanced strip-based PowerMESH™ layout. It is designed to offer extremely low on-resistance, high dv/dt capability, and enhanced ESD protection, making it suitable for demanding power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 1000 | V |
| Drain-Gate Voltage (VDGR) | 1000 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 6.5 | A |
| Continuous Drain Current (ID) at TC = 100°C | 4.3 | A |
| Pulsed Drain Current (IDM) | 16 | A |
| Total Dissipation at TC = 25°C | 160 | W |
| Static Drain-Source On Resistance (RDS(on)) | <1.85 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 to 4.5 | V |
| Thermal Resistance Junction-case (Rthj-case) | 0.78 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-a) | 62.5 | °C/W |
Key Features
- Extremely High dv/dt Capability: Suitable for the most demanding applications.
- 100% Avalanche Rated: Ensures robustness against high-energy pulses.
- Improved ESD Capability: Enhanced protection against electrostatic discharge.
- Very Low Intrinsic Capacitance: Reduces switching losses and improves efficiency.
- Integrated Zener Diodes: Provides built-in protection against voltage spikes, eliminating the need for external components.
- ECOPACK® Packages: Lead-free and compliant with environmental standards.
Applications
- High Current Switching Applications: Ideal for high-power switching scenarios.
- Off-Line Power Supplies: Suitable for use in power supply units requiring high voltage and current handling.
Q & A
- What is the maximum drain-source voltage of the STP8NK100Z?
The maximum drain-source voltage (VDS) is 1000 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 6.5 A.
- What is the typical on-resistance of the STP8NK100Z?
The typical static drain-source on-resistance (RDS(on)) is less than 1.85 Ω.
- What is the thermal resistance junction-case for the TO-220 package?
The thermal resistance junction-case (Rthj-case) is 0.78 °C/W.
- Does the STP8NK100Z have built-in ESD protection?
- What are the typical applications of the STP8NK100Z?
- What is the maximum operating junction temperature?
- What is the maximum lead temperature for soldering?
- Is the STP8NK100Z available in lead-free packages?
- What is the gate-source breakdown voltage?
The gate-source breakdown voltage (BVGSO) is 30 V.
