Overview
The STP8N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is characterized by its proprietary vertical structure, which significantly reduces on-resistance and gate charge, making it ideal for applications requiring high power density and efficiency.
The device is packaged in a TO-220 package and is part of STMicroelectronics' MDmesh K5 series, known for its superior performance in high-voltage applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 800 | V |
| RDS(on) max. (On-Resistance) | 950 mΩ | mΩ |
| ID (Continuous Drain Current at TC = 25 °C) | 6 | A |
| ID (Continuous Drain Current at TC = 100 °C) | 4 | A |
| IDM (Pulsed Drain Current) | 24 | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 110 | W |
| VGS (Gate-Source Voltage) | ±30 | V |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.14 | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 62.5 | °C/W |
Key Features
- Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
- Industry’s best Figure of Merit (FoM) for superior performance.
- Ultra-low gate charge, reducing switching losses and improving overall efficiency.
- 100% avalanche tested, ensuring robustness and reliability.
- Zener-protected, providing additional protection against voltage spikes.
Applications
The STP8N80K5 is suitable for various high-voltage switching applications, including but not limited to:
- Power supplies and converters.
- Motor control and drives.
- Industrial automation and control systems.
- High-voltage DC-DC converters.
- Other applications requiring high power density and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP8N80K5?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance (RDS(on)) of the STP8N80K5?
The typical on-resistance (RDS(on)) is 950 mΩ.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 6 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 24 A.
- What is the total power dissipation (PTOT) at 25 °C?
The total power dissipation (PTOT) at 25 °C is 110 W.
- What is the storage temperature range (Tstg) for the STP8N80K5?
The storage temperature range (Tstg) is -55 to 150 °C.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 1.14 °C/W.
- What is the thermal resistance from junction to ambient (RthJA)?
The thermal resistance from junction to ambient (RthJA) is 62.5 °C/W.
- Is the STP8N80K5 Zener-protected?
Yes, the STP8N80K5 is Zener-protected.
- What are some typical applications for the STP8N80K5?
Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.
