STP80NF55-08AG
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STMicroelectronics STP80NF55-08AG

Manufacturer No:
STP80NF55-08AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CHANNEL 55V 80A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP80NF55-08AG is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET process. This technology enhances the device's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP80NF55-08AG is designed for high-power switching applications, offering excellent electrical and thermal performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 55 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 80 A
Pulsed Drain Current (IDM) 320 A
Static Drain-Source On-Resistance (RDS(on)) < 0.008
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 35 (TO-220), 50 (TO-247), 62.5 (D²PAK) °C/W
Operating Junction Temperature (Tj) -55 to 175 °C
Storage Temperature (Tstg) -55 to 175 °C

Key Features

  • High packing density due to STripFET process, resulting in low on-resistance.
  • Rugged avalanche characteristics and less critical alignment steps for improved manufacturing reproducibility.
  • Standard threshold drive for ease of use in various applications.
  • Available in TO-220, D²PAK, and TO-247 packages to suit different design needs.
  • High current capability with continuous drain current up to 80 A and pulsed current up to 320 A.
  • Low thermal resistance for efficient heat dissipation.

Applications

  • Switching applications in power supplies, motor control, and power management systems.
  • High-power DC-DC converters and inverters.
  • Automotive and industrial power systems requiring high reliability and efficiency.
  • Power factor correction (PFC) circuits and other high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP80NF55-08AG?

    The maximum drain-source voltage (VDS) is 55 V.

  2. What is the continuous drain current (ID) at 25 °C for the STP80NF55-08AG?

    The continuous drain current (ID) at 25 °C is 80 A.

  3. What is the static drain-source on-resistance (RDS(on)) of the STP80NF55-08AG?

    The static drain-source on-resistance (RDS(on)) is less than 0.008 Ω.

  4. What are the available packages for the STP80NF55-08AG?

    The STP80NF55-08AG is available in TO-220, D²PAK, and TO-247 packages.

  5. What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.5 °C/W.

  6. What is the operating junction temperature range for the STP80NF55-08AG?

    The operating junction temperature range is -55 to 175 °C.

  7. What are typical applications for the STP80NF55-08AG?

    Typical applications include switching power supplies, motor control, high-power DC-DC converters, and automotive and industrial power systems.

  8. What is the maximum pulse current (IDM) for the STP80NF55-08AG?

    The maximum pulse current (IDM) is 320 A.

  9. What is the gate threshold voltage (VGS(th)) range for the STP80NF55-08AG?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  10. What is the thermal resistance junction-ambient (Rthj-amb) for the TO-247 package?

    The thermal resistance junction-ambient (Rthj-amb) for the TO-247 package is 50 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3740 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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