STP310N10F7
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STMicroelectronics STP310N10F7

Manufacturer No:
STP310N10F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 100V 180A TO-220
Delivery:
Payment:
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Product Introduction

Overview

The STP310N10F7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes the 7th generation of ST’s proprietary STripFET™ technology, featuring an enhanced trench-gate structure known as DeepGATE™. This technology results in the lowest RDS(on) (drain-source on-resistance) in all packages, making it ideal for high-power applications requiring low on-resistance and high current handling capabilities.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 100 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 180 A
Continuous Drain Current (ID) at TC = 100°C 120 A
Pulsed Drain Current (IDM) 720 A
Total Dissipation at TC = 25°C 315 W
Derating Factor 2.1 W/°C
Operating Junction Temperature -55 to 175 °C
Thermal Resistance Junction-Case 0.48 °C/W
Thermal Resistance Junction-Ambient 62.5 °C/W
Static Drain-Source On-Resistance (RDS(on)) 2.3 (typ.), 2.7 (max.)
Gate Threshold Voltage (VGS(th)) 2.5 to 4.5 V

Key Features

  • Ultra Low On-Resistance: The STP310N10F7 features a very low RDS(on) of 2.3 mΩ (typ.) and 2.7 mΩ (max.), making it highly efficient for power switching applications.
  • High Current Handling: Capable of handling continuous drain currents up to 180 A at TC = 25°C and pulsed currents up to 720 A.
  • Enhanced Trench-Gate Structure: Utilizes ST’s 7th generation STripFET™ technology with a new gate structure, enhancing performance and reducing on-resistance.
  • 100% Avalanche Tested: Ensures robustness and reliability in high-stress applications.
  • TO-220 Package: Available in the TO-220 package, which is widely used and compatible with various design requirements.

Applications

The STP310N10F7 is suitable for a variety of high-power switching applications, including:

  • Switching Power Supplies: High-efficiency power supplies, DC-DC converters, and SMPS.
  • Motor Control: Inverter stages for motor drives, especially in industrial and automotive applications.
  • Industrial Automation: Used in control circuits for industrial automation, such as in robotics and machinery.
  • Renewable Energy Systems: Solar and wind power systems where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum drain-source voltage of the STP310N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-resistance (RDS(on)) of the STP310N10F7?

    The typical on-resistance (RDS(on)) is 2.3 mΩ.

  3. What is the maximum continuous drain current at TC = 25°C?

    The maximum continuous drain current at TC = 25°C is 180 A.

  4. What is the package type of the STP310N10F7?

    The STP310N10F7 is available in the TO-220 package.

  5. What is the operating junction temperature range of the STP310N10F7?

    The operating junction temperature range is -55 to 175°C.

  6. Is the STP310N10F7 100% avalanche tested?

    Yes, the STP310N10F7 is 100% avalanche tested.

  7. What is the thermal resistance junction-case of the STP310N10F7?

    The thermal resistance junction-case is 0.48 °C/W.

  8. What are some common applications of the STP310N10F7?

    Common applications include switching power supplies, motor control, industrial automation, and renewable energy systems.

  9. What is the gate threshold voltage range of the STP310N10F7?

    The gate threshold voltage range is 2.5 to 4.5 V.

  10. Is the STP310N10F7 RoHS compliant?

    Yes, the STP310N10F7 is RoHS compliant with an Ecopack2 grade.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP310N10F7 STP315N10F7 STP30N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Last Time Buy
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 60A, 10V 2.7mOhm @ 60A, 10V 24mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V 12800 pF @ 25 V 1270 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 315W (Tc) 315W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

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