Overview
The STP270N8F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is designed for applications requiring low on-state resistance and high current handling. With a drain-source voltage (Vdss) of 80V and a continuous drain current (ID) of 180A, it is well-suited for demanding power management tasks. The MOSFET features an enhanced trench gate structure, which minimizes internal capacitance and gate charge, enabling faster and more efficient switching.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Fet Type | N-Ch | |
| No of Channels | 1 | |
| Drain-to-Source Voltage [Vdss] | 80 | V |
| Drain-Source On Resistance-Max [RDS(on)] | 0.0025 | Ω |
| Rated Power Dissipation [PTOT] | 315 | W |
| Gate Charge [Qg] | 193 | nC |
| Gate-Source Voltage-Max [Vgss] | ±20 | V |
| Drain Current [ID] | 180 | A |
| Pulsed Drain Current [IDM] | 720 | A |
| Turn-on Delay Time [td(on)] | 56 | ns |
| Turn-off Delay Time [td(off)] | 98 | ns |
| Rise Time [tr] | 180 | ns |
| Fall Time [tf] | 42 | ns |
| Operating Temp Range [TJ] | -55°C to +175°C | |
| Gate Source Threshold [VGS(th)] | 4 | V |
| Technology | Si | |
| Package Style | TO-220-3 (TO-220AB) | |
| Mounting Method | Through Hole |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 0.0017 Ω
- Excellent figure of merit (FoM) for high efficiency in power management applications
- Low Crss/Ciss ratio for enhanced EMI immunity
- High avalanche ruggedness, ensuring robust performance under stressful conditions
- Enhanced trench gate structure reducing internal capacitance and gate charge for faster switching
Applications
- Switching applications, including power supplies, motor drives, and high-frequency switching circuits
- High-performance power management in various industrial and automotive systems
Q & A
- What is the maximum drain-source voltage (Vdss) of the STP270N8F7?
The maximum drain-source voltage (Vdss) is 80V
- What is the continuous drain current (ID) rating of the STP270N8F7?
The continuous drain current (ID) is 180A
- What is the typical on-state resistance (RDS(on)) of the STP270N8F7?
The typical on-state resistance (RDS(on)) is 0.0017 Ω
- What is the maximum gate-source voltage (Vgss) for the STP270N8F7?
The maximum gate-source voltage (Vgss) is ±20V
- What is the operating junction temperature range for the STP270N8F7?
The operating junction temperature range is -55°C to +175°C
- What is the package style and mounting method of the STP270N8F7?
The package style is TO-220-3 (TO-220AB), and the mounting method is Through Hole
- What are the key features of the STripFET F7 technology used in the STP270N8F7?
The STripFET F7 technology offers low RDS(on), excellent FoM, low Crss/Ciss ratio for EMI immunity, and high avalanche ruggedness
- What are typical applications for the STP270N8F7?
Typical applications include switching applications, power supplies, motor drives, and high-frequency switching circuits
- What is the total gate charge (Qg) of the STP270N8F7?
The total gate charge (Qg) is 193 nC
- What is the thermal resistance junction-to-case (RthJC) for the STP270N8F7?
The thermal resistance junction-to-case (RthJC) is 0.48 °C/W
